A NAND Flash controller with an error detection and correction mechanism

Abstract

The invention provides a NAND Flash controller with an error detection and correction mechanism. A controller state machine realizes page programming operation, page reading operation, block erasing operation, read state operation, read ID operation and device reset operation. A register group comprises a command register, an address register, a data register and a status register. The ECC check module performs real-time check detection on the data read out or written in the data register when executing page programming operation or page reading operation. If data error is detected, the ECC check module cooperates with the controller state machine module to correct the error and store the corrected correct data in the data register. As the NAND flash characteristic are taken as constraints, the invention has an error detection and correction mechanism, and can improve the overall performance of the solid-state storage device.

Description

technical field [0001] The invention relates to the field of storage media, in particular to a NAND Flash control device. Background technique [0002] Traditional magnetic media storage devices work through mechanical transmission, which limits their application in special fields such as aerospace with high performance requirements. With the development and wide application of solid-state storage devices built with NAND Flash, the above problems in special applications have been effectively solved. The NAND Flash controller realizes the control of the NAND Flash chip. It directly sends control commands such as page reading, page programming and block erasing to the NAND Flash, and provides the timing waveform required for data interaction with the NAND Flash chip. It is a solid state The hard disk is a bridge for data access. However, the characteristics of the storage structure and external interface of the NAND Flash memory chip, such as the complex timing of read and w...

AI Technical Summary

Problems solved by technology

[0005] However, the more important thing is that the bit flipping phenomenon may occur during the frequent use of NAND Flash memory, especially as the single-chip capacity of NAND Flash memory is getting larger and larger, and the structure of the chip is becoming more and more complicated. The probability of bit flipping errors is increasing day by day, and commercial NAND Flash shelf products do not provide the ability to protect against bit flipping

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