Method for preparing contact hole in metal interconnection layer
A technology of interconnection layers and contact holes, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as the impact of product yield, and achieve the effects of improving damage, avoiding residue, and good electrical conductivity
Active Publication Date: 2021-04-06
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology
These derivatives remain on the surface of the metal layer, which can easily affect the yield of the product
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preparation example Construction
[0025] In a preferred embodiment, as figure 1 As shown, a method for preparing a contact hole in a metal interconnection layer is proposed, which may include:
[0026] Step S1, providing a substrate on which stacked metal layers 10 and dielectric layers 20 are formed;
[0027] Step S2, preparing and forming a photoresist layer 30 with an etching pattern on the upper surface of the dielectric layer 20;
[0028] Step S3, using an etching process to etch the dielectric layer 20 exposed by the etching pattern to form a groove TR connecting the metal layer 10 at the bottom;
[0029] Step S4, using a photoresist remover to remove the photoresist layer 30;
[0030] Step S5, performing negative charge treatment on the exposed surface of the metal layer 10 at the bottom of the groove TR, the negative charge treatment is used to negatively charge the exposed surface of the metal layer 10 at the bottom of the groove TR;
[0031] Step S6, using a cleaning solution to clean the upper su...
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The present invention relates to the field of semiconductor technology, in particular to a method for preparing a contact hole in a metal interconnection layer, comprising: step S1, providing a substrate on which stacked metal layers and dielectric layers are formed; Prepare the upper surface of the electrical layer to form a photoresist layer with an etching pattern; step S3, use an etching process to etch the dielectric layer exposed by the etching pattern, and form a groove connecting the metal layer at the bottom; step S4, remove the photoresist layer; Step S5, negatively charge the exposed surface of the metal layer at the bottom of the groove, and the negative charge treatment is used to negatively charge the exposed surface of the metal layer at the bottom of the groove; Step S6, use a cleaning solution to the dielectric The upper surface of the layer and the groove are cleaned; step S7, the groove is filled with a conductive material to form a contact hole; the derivatives can be avoided from forming residues on the surface of the metal layer, thereby improving the damage on the surface of the metal layer and ensuring contact Good electrical conductivity of the hole.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a contact hole in a metal interconnection layer. Background technique [0002] With the development of integrated circuit technology, the yield rate of wafer products has attracted more and more attention from the industry, and products with high yield rate can greatly guarantee the user experience. [0003] The metal interconnection process is a process of depositing a metal film on an integrated circuit chip, forming wiring through photolithography technology, and interconnecting mutually isolated components into a required circuit according to certain requirements. In the process of preparing the metal interconnection layer, it is easy to produce residues of some derivatives on the metal surface, and the residues of these derivatives react with a cleaning solution such as ST250, and it is easy to further generate metal ions. These derivatives rem...
Claims
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IPC IPC(8): H01L21/768
CPCH01L21/76814
Inventor 邹浩丁振宇
Owner WUHAN XINXIN SEMICON MFG CO LTD