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Stress detection method and stress detection system for dielectric film layer

A technology of stress detection and dielectric film, which is applied in the direction of force/torque/power measuring instrument, semiconductor/solid-state device testing/measurement, measuring device, etc., can solve the problem of incorrect results and achieve the effect of accurate measurement results

Active Publication Date: 2021-07-13
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that the results obtained by the above method are not correct.

Method used

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  • Stress detection method and stress detection system for dielectric film layer
  • Stress detection method and stress detection system for dielectric film layer
  • Stress detection method and stress detection system for dielectric film layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0094] In step S100, TEOS with a thickness of 4000 angstroms is deposited on 25 wafers (the material is a single crystal silicon wafer with a size of 12 inches) as an initial reference organic film;

[0095] In step S200, perform preheating treatment on the wafer formed with the initial reference organic film to obtain the final reference organic film, wherein the temperature of the preheating treatment is 350° C., and the duration is 60 seconds to 120 seconds;

[0096] The following steps are carried out every two days until 25 wafers are inspected:

[0097] In step S300, the first radius of curvature of the final reference organic film is detected every two days;

[0098] In step S400, degas the wafer with the final reference organic film at 230°C; and form the dielectric film layer on the final reference organic film after the degassing treatment, and the material of the dielectric film layer is TiN ;

[0099] In step S500, measure the second radius of curvature of the fi...

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Abstract

The invention provides a stress detection method of a dielectric film layer, characterized in that the stress detection method comprises: depositing and forming an initial reference organic film on at least one wafer; preheating the wafer formed with the initial reference organic film processing to obtain a final reference organic film; detecting the first radius of curvature of the final reference organic film; forming the dielectric film layer on the final reference organic film; measuring the final reference organic film layer formed with the dielectric film layer The second radius of curvature; according to the measured first radius of curvature and the second radius of curvature on the same wafer, the parameters reflecting the stress of the dielectric film on the wafer are calculated. The invention also provides a stress detection system for the dielectric film layer. The stress of the dielectric film layer can be accurately detected by using the stress detection method.

Description

technical field [0001] The invention relates to a dry etching process, in particular to a stress detection method for a dielectric film layer and a stress detection system for realizing the stress detection method. Background technique [0002] As semiconductor technology enters the process of 28nm and below, the dry etching process must transfer the lithographic pattern to the wafer very accurately and avoid damage to the outline of the pattern formed on the wafer. [0003] Because TiN has a high etching selectivity to ULK dielectrics, TiN films are often used as hard masks when etching metals. However, the TiN film has compressive stress. As the chip size decreases, the compressive stress of the TiN film may cause deformation or collapse of the pattern after dry etching, such as figure 1 shown. Therefore, when performing dry etching, it is necessary to detect the stress of the TiN film. [0004] In the prior art, when performing stress detection on the TiN film, it is n...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66G01L5/00
CPCG01L5/00H01L22/12
Inventor 马振国
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD