Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Normally Off Field Effect Transistor

A field effect transistor and normally-off technology, applied in the field of normally-off field effect transistors, can solve the problem of large loss of device performance, and achieve the effects of large saturation current, controllable threshold voltage ultra-wide area, and no loss of device performance.

Active Publication Date: 2021-06-15
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a kind of normally off type field effect transistor, to solve the technical problem that the saturation current of the normally off type graphene field effect transistor existing in the prior art and the device performance loss of frequency are big

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Normally Off Field Effect Transistor
  • Normally Off Field Effect Transistor
  • Normally Off Field Effect Transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0023] Please also refer to Figure 1 to Figure 3 , the normally-off field effect transistor provided by the present invention will now be described. The normally-off field effect transistor includes a substrate 1, at least two two-dimensional material layers 2 arranged at intervals on the upper side of the substrate 1, a source electrode 3 arranged on the upper side of the two-dimensional material layer 2, and The drain electrode 4 disposed on the upper side of the two-dimensional material layer 2 and spaced from the source electrode 3, the barrier layer 5 dispos...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
widthaaaaaaaaaa
widthaaaaaaaaaa
Login to View More

Abstract

The invention provides a normally-off field effect transistor, belonging to the field of semiconductor devices, comprising a substrate, at least two two-dimensional material layers arranged at intervals on the upper side of the substrate, and two-dimensional material layers arranged on the two-dimensional material layer. The source electrode on the upper side of the layer, the drain electrode arranged on the upper side of the two-dimensional material layer and spaced apart from the source electrode, the upper side of the two-dimensional material layer and located on the source electrode and the drain electrode barrier layer between them and at least one gate electrode arranged on the upper side of the barrier layer; a two-dimensional material fault zone is formed between two adjacent two-dimensional material layers, and at least one side of the two-dimensional material fault zone The edge protrudes outward from the side edge of the projection area of ​​the gate electrode on the plane where the two-dimensional material layer is located. The normally-off type field effect transistor provided by the invention ensures that the transistor can be pinched off and realizes normally-off, while not sacrificing the mobility and electron saturation speed of the device itself, and the performance of the device is not lost.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and more specifically relates to a normally-off field effect transistor. Background technique [0002] Two-dimensional nanomaterials refer to materials in which electrons can only move freely (planar motion) on the non-nanoscale (1-100nm) in two dimensions, such as nanofilms. In the past decade, the discovery and research of two-dimensional nanomaterials have made great progress, and two-dimensional nanomaterials including graphene, hexagonal boron nitride, molybdenum disulfide, tungsten disulfide, silicene and germanene have been formed. The development of the entire field of two-dimensional materials has also risen to a new level. Graphene is a typical representative of two-dimensional material devices. It has many excellent physical and chemical properties, and is the thinnest and lightest material currently known, with a thickness of only 0.34nm and a specific surface area of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/10
CPCH01L29/1033H01L29/78
Inventor 王元刚冯志红吕元杰房玉龙周幸叶宋旭波谭鑫蔚翠
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com