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Sealing structure, method for manufacturing same, and sealing material

A technology of sealing structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor device, electric solid-state device and other directions, can solve the problems of difficult external connection of terminals, narrow spacing between terminals, and difficulty in ensuring connection reliability, etc. The effect of simplifying the wiring formation process

Active Publication Date: 2019-01-04
RESONAC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] If the miniaturization of semiconductor elements progresses and the number of terminals gradually increases, it will become difficult to provide all external connection terminals (terminals for external connection) on semiconductor elements
For example, when the external connection terminals are barely provided, the pitch between the terminals becomes narrow and the height of the terminals becomes low, making it difficult to secure connection reliability after mounting the semiconductor device

Method used

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  • Sealing structure, method for manufacturing same, and sealing material
  • Sealing structure, method for manufacturing same, and sealing material
  • Sealing structure, method for manufacturing same, and sealing material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0133] (preparation of varnish)

[0134] The varnish (varnish-like resin composition) having the composition shown in Table 1 was prepared as follows. 100 g of component D was put into a 10 L container made of polyethylene. Next, after adding 750.8 g of component B3 to a container, component B3 was dispersed using the stirring blade, and the dispersion liquid was obtained. 90.1 g of component a11, 31 g of component a13, 24 g of component a14, 9 g of component a15, and 93.1 g of component a21 were added to this dispersion liquid, followed by stirring. After confirming that component a21 was dissolved, 1.9 g of component a3 was added, and stirring was further performed for 1 hour. The resulting mixture was filtered through #200 mesh (opening diameter: 75 μm) made of nylon. The filtrate was collected to obtain a varnish.

[0135] (Production of sealing material A)

[0136] Apply the above-mentioned varnish on copper foil (manufactured by Nippon Denkai Co., Ltd., trade name: ...

Embodiment 2

[0180]689.6g of component B1 was used as an inorganic filler, 130.5g of component a11, 37.1g of component a12, and 17.1g of component a13 were used as an epoxy resin, 123.5g of component a22 was used as a curing agent, and 2.3g of component a3 was used Except not using an elastomer-containing epoxy resin as a hardening accelerator, it carried out similarly to Example 1, and prepared the varnish (varnish-like resin composition) which has the composition shown in Table 1. Then, it carried out similarly to Example 1, the sealing material was produced, and each measurement was performed. The measurement results are shown in Table 1.

Embodiment 3

[0182] Use 802.2g of component B1 as an inorganic filler, use 96.1g of component a11 and 24g of component a13 as an epoxy resin, use 76.1g of component a23 as a curing agent, use 1.5g of component a3 as a curing accelerator, and use no Except for the elastomer-containing epoxy resin, it carried out similarly to Example 1, and prepared the varnish (varnish-like resin composition) which has the composition shown in Table 1. Then, it carried out similarly to Example 1, the sealing material was produced, and each measurement was performed. The measurement results are shown in Table 1.

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Abstract

Disclosed is a method for manufacturing a sealing structure, said method being provided with a sealing step for sealing an electronic component 10 by means of a resin layer 20a of a sealing material 1that is provided with a metal layer 30, and the resin layer 20a disposed on the metal layer 30.

Description

technical field [0001] The present invention relates to a sealing structure, a manufacturing method thereof, and a sealing material. Background technique [0002] The miniaturization and thinning of semiconductor devices are progressing along with the thinner and lighter electronic equipment. The form of using a semiconductor device approximately the same size as a semiconductor element, or the form of mounting a semiconductor device on a semiconductor device (package-on-package) is prevailing, and it is expected that the miniaturization and thinning of semiconductor devices will further develop in the future . [0003] As semiconductor elements are miniaturized and the number of terminals increases, it becomes difficult to provide all external connection terminals (terminals for external connection) on the semiconductor element. For example, when the external connection terminals are barely provided, the pitch between the terminals becomes narrow and the height of the ter...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/56H01L23/28H01L23/29H01L23/31
CPCH01L23/28H01L23/29H01L23/31H01L21/56H01L21/52H01L21/78H01L21/561
Inventor 渡濑裕介藤本大辅野村丰荻原弘邦金子知世铃木雅彦
Owner RESONAC CORP