A high transmittance photovoltaic encapsulation material using nucleating antireflection agent

A packaging material, high light transmittance technology, applied in photovoltaic power generation, adhesives, adhesive additives, etc., can solve the long-term UV resistance and mechanical properties of EVA film, the high price of graphene oxide nanometer, affects the long-term reliability of components to improve the photoelectric conversion efficiency, shorten the molding cycle, and increase the strength

Active Publication Date: 2021-02-05
HANGZHOU FIRST APPLIED MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Patent application 101353558A does not use ultraviolet light absorbers, and improves light transmittance by increasing light absorption, but because the material does not contain ultraviolet light absorbers, the long-term ultraviolet resistance and mechanical properties of EVA film may be affected
Patent application CN102656705A uses organic fluorescent dyes to dope packaging materials through wavelength conversion to improve its light transmittance, but its absorption band is narrow, and there is obvious self-absorption loss, and yellowing and light transmittance decline will occur after long-term use
Patent application CN107502232A adds a composite plasticizer composed of spiropyran and phthalates to EVA resin to improve its light transmittance, but this plasticizer is easy to migrate in a high-temperature and high-humidity environment, which affects the long-term durability of the component Reliability, the graphene oxide nanometers added to the system are expensive
At present, there is no patent report on improving the light transmittance of packaging materials by adding nucleating antireflection agents with nanoparticles with quantum effects.

Method used

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  • A high transmittance photovoltaic encapsulation material using nucleating antireflection agent

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] This embodiment provides a photovoltaic encapsulation material with high light transmittance.

[0024] In this example, by mass fraction, the VA mass content of 100 mass parts is the ethylene-vinyl acetate copolymer of 28%, adds the cadmium sulfide of 0.5 mass part, the tert-butyl peroxyisopropyl carbonate of 1 mass part, 5 parts by mass of trimethylolpropane triacrylate, 1 part by mass of KH550, 0.1 part by mass of 2-hydroxy-4-n-octyloxybenzophenone, 0.1 part by mass of bis-2,2,6 sebacic acid ,6-tetramethylpiperidinol ester. Mix evenly, and the above mixture is pre-mixed, melt-extruded, cast into a film, cooled, slitting and winding to obtain the photovoltaic encapsulation material, which is denoted as E-1.

Embodiment 2

[0026] This embodiment provides a photovoltaic encapsulation material with high light transmittance.

[0027] In this example, in terms of mass fractions, 90 parts by mass of ethylene-vinyl acetate copolymer with a mass content of VA of 26% is added, and 10 parts by mass of the above-mentioned ethylene-vinyl acetate copolymer (with a mass content of VA of 26%) and Cadmium selenide blended and granulated masterbatch at 5 wt%, 1 mass part of tert-butyl peroxyisopropyl carbonate, 5 mass parts of trimethylolpropane triacrylate, 2 mass parts of KH550, 0.4 mass parts 2-Hydroxy-4-n-octyloxybenzophenone, 1 part by mass of bis-2,2,6,6-tetramethylpiperidinol sebacate. Mix evenly, and the above mixture is pre-mixed, melt-extruded, cast into a film, cooled, slitting and winding to obtain the photovoltaic packaging material, which is designated as E-2.

Embodiment 3

[0029] This embodiment provides a photovoltaic encapsulation material with high light transmittance.

[0030]In this example, in terms of mass fractions, 90 parts by mass of ethylene-vinyl acetate copolymer with a mass content of VA of 20%, 10 parts by mass of ethylene-vinyl acetate copolymer with a mass content of 20% are grafted with methyl Acrylic anhydride (graft rate 10%), adding 5 mass parts of zinc sulfide, 1.5 mass parts of tert-butyl peroxide 3,3,5-trimethylhexanoate, 10 mass parts of pentaerythritol triacrylate, 3 mass parts 0.2 parts by mass of KH550, 0.2 parts by mass of 2-hydroxy-4-n-octyloxybenzophenone, and 0.5 parts by mass of bis-2,2,6,6-tetramethylpiperidinol sebacate. Mix evenly, and the above mixture is pre-mixed, melt-extruded, cast into a film, cooled, slitting and winding to obtain the photovoltaic packaging material, which is marked as E-3.

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Abstract

The invention discloses a photovoltaic encapsulation material with high light transmittance using a nucleating anti-reflection agent, which is premixed with a photovoltaic encapsulation material matrix resin, a graft-modified matrix resin, a nucleation anti-reflection agent and other additives , melt extrusion, cast film forming, cooling, slitting and winding, etc., by adding a nucleating anti-reflection agent with quantum dot nanoparticles in the packaging material system, on the one hand, it can change the crystallization in the resin structure The crystallization behavior of the polymer chain segment accelerates the crystallization rate, increases the crystallization density, and promotes the miniaturization of the grain size. The grain size is smaller than the wavelength of visible light, thereby improving the light transmittance of photovoltaic packaging materials. On the other hand, quantum dot nanoparticles can It plays the role of converting short-wave to long-wave, realizes the conversion of high-energy photons into more low-energy photons, has the effect of photon multiplication, improves the light intensity incident on the battery sheet, increases the utilization rate of sunlight by components, optimizes and Improve the photoelectric conversion efficiency of the module.

Description

technical field [0001] The invention belongs to the field of packaging materials for photovoltaic modules, in particular to a photovoltaic packaging material with high light transmittance. Background technique [0002] Sunlight is a continuous spectrum, and its distribution range is mainly from ultraviolet light of a few tenths of a micron to infrared light of a few microns. The energy gap of silicon is 1.12eV. Crystalline silicon solar cells mainly absorb light around 400-1100nm, and have very low quantum efficiency for light below 400nm (purple light and ultraviolet light), thus causing loss of solar light energy below 400nm. Quantum dot nanoparticles have good photostability, absorption bandwidth, can absorb light lower than the wavelength of the semiconductor material absorption spectrum, and then generate light with the same wavelength as the semiconductor material absorption spectrum, and the emitted light is absorbed by the semiconductor material, increasing the The ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09J7/10C09J7/30C09J4/02C09J4/06C09J11/04H01L31/048
CPCC09J4/06C09J11/04C09J7/10C09J7/30H01L31/0481Y02E10/50
Inventor 魏梦娟周光大侯宏兵桑燕
Owner HANGZHOU FIRST APPLIED MATERIAL CO LTD
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