Semiconductor device manufacturing method and semiconductor device
A manufacturing method and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as complex processes and high production costs
Active Publication Date: 2020-01-24
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology
The inventors have found that currently three photolithography (requiring three photomasks) and three etching processes are usually used, and the process is relatively complicated and the production cost is relatively high.
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[0034] The manufacturing method of the semiconductor device and the semiconductor device proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0035] An embodiment of the present invention provides a method for manufacturing a semiconductor device, such as figure 1 shown, including:
[0036] Provide a bonded first wafer and a second wafer, the first wafer includes a first substrate, a first dielectric layer and a first metal layer, and the second wafer includes a second substrate, a first two dielectric layers and a second metal layer, the first dielectric layer f...
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The invention provides a method for manufacturing a semiconductor device and a semiconductor device. Firstly, photolithography and etching processes are performed to form a first opening that penetrates the first substrate, the first dielectric layer and the second dielectric layer with a partial thickness, and then photolithography is performed. and an etching process to form a second opening through the first substrate and a partial thickness of the first dielectric layer, and then perform a maskless etching process to expose the second metal layer and the second metal layer under the first opening The part of the first metal layer under the second opening is finally formed with an interconnection layer to realize the metal interconnection between the two wafers. The invention only needs two photomasks to form the first opening and the second opening, and realizes the interconnection of the first metal layer and the second metal layer, thereby simplifying the process and reducing the production cost.
Description
technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing, and in particular relates to a manufacturing method of a semiconductor device and a semiconductor device. Background technique [0002] Under the trend of highly integrated semiconductor development, the integration of chips with different functions is the main development direction of semiconductor packaging technology. Wafer-level stacking based on 3D-IC technology can achieve lower cost, faster and higher density. Target. After wafer bonding, how to realize the metal interconnection between wafers is an important process in the semiconductor process. The inventors have found that currently three photolithography (three photomasks are required) and three etching processes are usually used, and the process is relatively complicated and the production cost is relatively high. Contents of the invention [0003] The object of the present invention is to provide a method...
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IPC IPC(8): H01L21/768H01L23/522H01L23/528
CPCH01L21/76802H01L21/76877H01L23/5226H01L23/5283
Inventor 赵长林刘天建胡胜丁振宇
Owner WUHAN XINXIN SEMICON MFG CO LTD