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A deep trench semi-superjunction power device and its manufacturing method

A power device and semi-superjunction technology, which is applied in the field of deep-groove semi-superjunction structure power devices and manufacturing, to achieve the effect of reducing on-resistance

Active Publication Date: 2021-07-20
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the on-resistance is limited by the breakdown voltage and there is a limit - called the "silicon limit" (Silicon limit), which cannot be lowered any further.

Method used

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  • A deep trench semi-superjunction power device and its manufacturing method
  • A deep trench semi-superjunction power device and its manufacturing method
  • A deep trench semi-superjunction power device and its manufacturing method

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Embodiment Construction

[0038] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0039] based on figure 1 , figure 2 The schematic diagram of the cellular structure of the traditional superjunction VDMOS and the schematic diagram of the cellular structure of the semi-superjunction VDMOS are respectively designed. The present invention designs a deep groove semi-superjunction power device, such as image 3 As shown, it includes a deep groove gate (6), a substrate, and a source contact metal layer (1), two source regions (2), two P well adjustment regions (3), Two P wells (4), two body voltage support layers (5), two P columns in the super junction region (7), N columns in the super junction region (8), an electric field stop layer (9), and a drain contact metal layer ( 10) and gate oxide region (11);.

[0040] Wherein, the electric field stop layer (9) is a heavily doped N-type layer in the drain ...

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Abstract

The invention relates to a power device with a deep groove semi-superjunction structure and a manufacturing method. The deep groove semi-superjunction structure based on the improved structure of the semi-superjunction, compared with the traditional semi-superjunction structure, does not have a voltage support layer at the bottom, but in The semi-superjunction effect is generated between the superjunction structure and the source region through the bulk voltage support layer. At the same time, the trench gate is deep and runs through the entire bulk voltage support layer, which can further reduce the on-resistance on the basis of the semi-superjunction structure.

Description

technical field [0001] The invention relates to a deep groove semi-super junction structure power device and a manufacturing method, which belong to the technical field of semiconductors. Background technique [0002] Power semiconductor devices, also known as power electronic devices, usually refer to semiconductor devices with an operating current of tens to thousands of amps and an operating voltage of hundreds of volts. Power semiconductor devices are mainly used in power conversion and control circuits of power equipment. Power devices are used in almost all electronic manufacturing industries, including notebooks, PCs, servers, displays, and various peripherals in the computer field; mobile phones, telephones, and other various terminals and local end devices in the field of network communications; traditional Black and white home appliances and various digital products; industrial PCs in the field of industrial control, various instruments and meters, and various con...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L29/423H01L21/336
CPCH01L29/0634H01L29/4236H01L29/66734H01L29/7811H01L29/7813
Inventor 沈克强张乐景润东
Owner SOUTHEAST UNIV