Device and method for testing high-temperature electrical characteristics of semiconductor devices
A test method and test device technology, which are applied in the direction of single semiconductor device testing, measuring devices, instruments, etc., can solve the problem of inability to quickly and accurately realize the high-temperature electrical characteristics test of semiconductor devices, and achieve easy automatic testing and continuous large-scale batches. The effect of testing, testing process safety
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Embodiment 1
[0032] An embodiment of the present invention provides a semiconductor device high temperature electrical characteristic testing device, such as figure 1 As shown, it includes: pulse power supply 1, constant temperature heating equipment 2, and electrical characteristic testing equipment 3.
[0033] To conduct high-temperature electrical characteristic tests on semiconductor devices, they need to be heated first. In the embodiment of the present invention, within the first preset time, the pulse power supply 1 provides current pulses to the semiconductor device 4 to be tested, and the constant temperature heating device 2 heats the semiconductor device 4 to be tested.
[0034] In the embodiment of the present invention, the semiconductor device to be tested has a turn-on voltage drop when current flows, and the current pulse can be a current pulse signal with a preset current value and a preset duration determined according to a preset target temperature. Such as Figure 4 A...
Embodiment 2
[0046] An embodiment of the present invention provides a method for testing the high-temperature electrical characteristics of a semiconductor device, such as image 3 shown, including the following steps:
[0047] Step S1: During the first preset time, control the pulse power supply to provide current pulses to the semiconductor device to be tested, and control the constant temperature heating device to heat the semiconductor device to be tested. In the embodiment of the present invention, the semiconductor device to be tested has a turn-on voltage drop when current flows, and the current pulse can be a current pulse signal with a preset current value and a preset duration determined according to a preset target temperature.
[0048] Such as Figure 4 As shown, in the embodiment of the present invention, the semiconductor device to be tested is heated to a temperature close to the test target temperature T after the preset current heating time t1 j-set , such as the target ...
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