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A two-dimensional flexible magnetic storage array and its preparation method

A technology of magnetic storage and magnetic storage unit, applied in the field of two-dimensional flexible magnetic storage array and its preparation, achieving reasonable design, stable magnetic storage function, and complex manufacturing process

Active Publication Date: 2020-07-24
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the shortcomings of the prior art, provide a two-dimensional flexible magnetic storage array and its preparation method, and solve the problems of the preparation and application of magnetic storage materials in the above-mentioned background technology

Method used

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  • A two-dimensional flexible magnetic storage array and its preparation method
  • A two-dimensional flexible magnetic storage array and its preparation method
  • A two-dimensional flexible magnetic storage array and its preparation method

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Embodiment 1

[0032] Please check figure 1 , a two-dimensional flexible magnetic storage array of the present embodiment, comprising a PET flexible substrate 6 and a plurality of magnetic memory unit devices, and the array of magnetic storage unit devices is arranged on the flexible substrate 6;

[0033] Please check figure 2 , the magnetic memory cell device includes a first conductive electrode 1, a sandwich structure and a second conductive electrode 5 stacked sequentially from bottom to top; the sandwich structure is sequentially doped with the first BN layer 2 / vacancy The III-VI group chalcogenide layer 3 / second BN layer 4, the chemical formula of the III-VI group chalcogenide is MX, in this embodiment M is Ga, X is Se, and the vacancy is a monolayer Ga atom defects in the GaSe two-dimensional material; the thickness of the first BN layer 2 and the second BN layer 4 is 3 molecular layers, and the thickness of the monomolecular layer GaSe two-dimensional material containing Ga atom va...

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Abstract

The invention discloses a two-dimensional flexible magnetic storage array and a preparation method thereof, which adopts a sandwich structure and is reasonably designed, and grows vacancy-doped III-VI group chalcogenides by precisely controlling the temperature, ratio and growth time of the growth source layer to achieve the realizability of electrical regulation, so as to realize the storage and recording functions of each magnetic memory unit device and two-dimensional flexible magnetic memory array. Used in environment or vacuum environment, the magnetic storage function is stable, combined with a flexible substrate, it has a wide range of applications and strong applicability.

Description

technical field [0001] The invention belongs to the technical field of magnetic storage and magnetic recording, and in particular relates to a two-dimensional flexible magnetic storage array and a preparation method thereof. Background technique [0002] Since the 1990s, the electronic information industry has made remarkable achievements. Modern information storage technology not only makes information storage high-density, but also combines information storage with fast retrieval, which has become the basis for the development of information work. It is important in industrial automation, embedded computing, network and data storage, automotive and aerospace. It has great application value in the fields of people's livelihood and national defense. Among them, magnetic storage technology has many advantages such as non-volatile data storage, long life, low power consumption, and radiation resistance, and has become the pillar of modern information storage technology. [0...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/22H01L43/10
CPCH10B61/10H10B61/00H10N50/85
Inventor 郑晅丽唐唯卿吴雅苹吴志明张纯淼康俊勇
Owner XIAMEN UNIV