60results about How to "Solve the complex preparation process" patented technology

The invention provides an OLED display panel and a manufacturing method thereof. The OLED display panel comprises a TFT assembly, an auxiliary electrode, an anode, a lap joint electrode, a metal layer, an organic matter layer, an organic light-emitting layer and a cathode. The lap joint electrode is connected with the auxiliary electrode, and the organic light-emitting layer and the cathode are connected with the auxiliary electrode; and the metal layer and the organic matter layer have undercut structures.

The invention relates to a preparation method of a polymer optical waveguide with an inclined-surface coupling port, belongs to the technical field of three-dimensional integration of optical waveguides and particularly relates to a method for preparing a polymer optical waveguide with an inclined-surface coupling port through gray scale lithography in combination with secondary waveguide lithography. The port can be used for the three-dimensional integration of the optical waveguides. The polymer optical waveguide with the inclined-surface coupling port prepared by adopting the preparation method is prepared by adopting laser cutting, gradient evaporation and nano-imprinting, the problem that a preparation process of a gray scale photomask is complex is solved, the device cost is reduced, the length and angle of an inclined surface of the waveguide can be accurately controlled, the inclined surface has good roughness according to wet-process development and the roughness of the inclined surface is smaller than 5nm. The method provided by the invention is suitable for mass production of practically applicable three-dimensional spatial integrated devices of organic polymers and other materials; moreover, when photoresist with special thickness is adopted, the structure provided by the invention can be applied to the preparation of 45-degree optical waveguide reflector inclined surfaces.

The invention discloses a wall material capable of adjusting indoor environmental temperature and humidity and a preparation method of the wall material. The wall material is prepared from components in percentage by weight as follows: 42%-52% of building plaster, 5%-15% of temperature adjustment components, 2%-8% of humidity control components, 32%-42% of water, 0.1%-0.4% of water reducing agents, 0.005%-0.01% of pigments and 0.2%-1.0% of fiber. According to the wall material, the preparation process of a functional wall material is optimized, fluctuation of indoor environmental temperature and humidity is reduced, the durability, the anti-permeability, the anti-cracking performance and the fireproof performance of a wall body are improved, and energy consumption is reduced during construction; with the adoption of the temperature adjustment components and the humidity control components, the wall material has the function of indoor environmental temperature and humidity adjustment, the homogeneity of the wall material is guaranteed, and a product has high strength and seldom contracts; the thermal physical performance of the wall material is excellent, the wall body does not require a thermal-insulation layer, and construction procedures are reduced.

The invention discloses a one glass solution (OGS) capacitive touch screen which comprises a PET protective film, optical cement, an ITO functional piece and a soft circuit board, wherein the PET protective film, the optical cement and the ITO functional piece are arranged in an up-down overlapping mode, and the soft circuit board is attached to the upper surface or the lower surface of the ITO functional piece. The invention further discloses a manufacturing method of the OGS capacitive touch screen. The manufacturing method of the OGS capacitive touch screen includes the following steps: 1, preparing the PET protective film, and preparing the soft circuit board; 2, converting a functional pattern into a laser path; 3, leading the laser path into a laser device; 4, etching a large-piece ITO plate by using the laser device; 5, dividing the large-piece ITO plate and forming the single ITO functional piece in a splicing and combined mode; 6, connecting the soft circuit board to the ITO functional piece, and carrying out electrical logging on functions; 7, splicing the ITO functional piece and the PET protective film; 8, carrying out the electrical logging on finished products. The OGS capacitive touch screen and the manufacturing method of the OGS capacitive touch screen are rich in color, capable of preparing soft touch screens, simplified in production procedure, less in investment of production lines and environment-friendly in production, and products have higher competitiveness.

The invention discloses a disulfonic surfactant, a clean fracturing fluid and a preparation method of the disulfonic surfactant. The preparation method comprises: with a low-cost and easily-available long-chain tertiary amine compound and epoxy chloropropane as raw materials, an intermediate A is produced, then the intermediate A and piperazine-N,N'-bis(2-ethanesulfonic acid) sesquicarbonate are further subjected to a quaternization reaction, and the double-tailed disulfonic acid group surfactant is prepared. The disulfonic acid group surfactant has good surface activity reducing capability and is simple to prepare; the clean fracturing fluid using the thickening agent has excellent salt resistance and temperature resistance, and the shear viscosity of the optimal product at 120 DEG C and 170/s is not less than 60 mPa.s, which is far greater than 25 mPa.s required by field construction of the clean fracturing fluid. The product has a good application prospect in oil field fracturing fluid and recovery efficiency improvement.

The embodiment of the invention discloses an array substrate, a backlight module, a display panel, a display device and a preparation method. The array substrate comprises a plurality of driving units. Each driving unit comprises a first electrode, a second electrode and at least one thin film transistor; the first electrode and the second electrode are used for being connected with the anode andthe cathode of a light emitting diode respectively, so that the vertical projection of the light emitting diode on the array substrate can be overlapped with the at least one thin film transistor, andthe thin film transistor is located at the backlight side of the light emitting diode in the light emitting direction of the light emitting diode. The driving unit controls the light-emitting diode to be turned on or off according to the driving signal. According to the embodiment of the invention, the problem that an existing array substrate needs to be additionally provided with a shading layer, so that the preparation process is complex, is solved; the influence of external illumination on the thin film transistor can be avoided, masks and preparation procedures required for preparing theshading layer are saved, the preparation process of the array substrate is simplified, and the manufacturing cost is reduced.

The invention belongs to the technical field of inorganic material preparation, and particularly relates to a preparation method of a silicon-based heteropolyacid doped magnetic composite membrane material. The preparation method comprises the following steps: (1) adding a metal salt A, a metal salt B and graphene oxide into a solvent C, stirring, adding silicon-based heteropolyacid, and continuing to stir uniformly to obtain a mixed solution; (2) dissolving alkali in the mixed solution, and carrying out solvothermal reaction; and (3) carrying out suction filtration on a product prepared by the solvothermal reaction, and respectively washing and drying with ethanol and water to form a film. The preparation method of the silicon-based heteropolyacid doped magnetic composite membrane material is simple, the composition and the structure are controllable, the thickness of the membrane layer is controllable, the membrane layer has magnetism and is convenient to recycle and use, and the problem that the preparation process of the composite membrane material is complex is solved; the method is simple in process flow, environment-friendly, suitable for large-scale industrial production and wide in application prospect; the prepared silicon-based heteropolyacid doped magnetic composite membrane material is excellent in Fenton performance, recyclable and high in structural stability.

The invention belongs to the field of machining and particularly relates to a metal frame structure and a manufacturing method thereof. In order to solve the problems that the existing metal frame structure manufacturing process is complex, the working intensity is high, the sharp corner potential safety hazards exist, the production efficiency is low, and the environmental pollution is high, the invention provides a metal frame structure and a manufacturing method thereof. The metal frame structure is simple in process, attractive in appearance, free of sharp corner potential safety hazards, low in environmental pollution and high in production efficiency. The metal frame structure is specifically formed by butting and splicing eight vertex angle connectors and frame beams. The vertex angle connectors are precision stamping parts or precision castings with vertex angles and edges which are in circular arc transition. During manufacturing, only the vertex angle connectors need to be welded to the butted inner surfaces of the frame beams; the process is simple and is easy to operate; polishing is not needed or only a small amount of polishing and finishing are needed; the dust pollution is avoided; the production efficiency is obviously improved; and the method is widely used for machining and manufacturing various box bodies, table bodies and frame structural bodies, is applied to small-batch and large-batch production, and has wide application and popularization prospects.

The invention discloses a bulletproof ceramic chip with a cyclic structure and a bulletproof target plate as well as preparation methods of the bulletproof ceramic chip and the bulletproof target plate. The bulletproof ceramic chip is circular and is formed by nesting a central ceramic circular plate and multiple groups of rings, wherein the inner diameters of the multiple groups of rings are sequentially increased. The bulletproof target plate comprises the bulletproof ceramic chip with the cyclic structure and a PE back plate; the bulletproof ceramic chips are uniformly distributed on the PEback plate. According to the bulletproof ceramic chip disclosed by the invention, a cyclic structural design is introduced, so that the bulletproof performance of the bulletproof ceramic chip can beimproved; a certain amount of TiO2 and MgO powder is introduced into an Al2O3 powder so as to achieve low-temperature sintering; a certain amount of 3Y-ZrO2 is introduced so as to achieve the toughness; due to the existence of filling powder among the rings, the ceramic chip, ceramic rings and special parts can be bonded by sintering and the production efficiency of the bulletproof plate is favorably improved; the preparation methods disclosed by the invention have the characteristics of abundant raw material powder sources, low cost, simple production process and stable product quality.

The invention discloses a connecting method of electronic building blocks. The connecting method comprises the following steps: (1) preparing a basic module of each electronic building block with thefunction of a basic circuit and the basic circuit of the basic module, and arranging the basic circuit in the basic module, wherein two or more electric connecting points are preset on the basic module of each electronic building block and the basic circuit of the basic module; (2) preparing a branch circuit module of each electronic building block and a branch circuit of the branch circuit module, and arranging metal elastic contacts at the bottom of the branch circuit module of each electronic building block, wherein the metal elastic contacts are connected with the branch circuit through lines; (3) arranging circular-truncated-cone-shaped concave-convex structures on the upper end face of the basic module of each electronic building block, arranging concave holes in any adjacent circular-truncated-cone-shaped concave-convex structures, and arranging the electric connecting points of the basic module of each electronic building block in the concave holes; and (4) cascading the electronic building blocks in a direct insertion manner so that a combination body of the electronic building blocks is formed, and meanwhile, connecting the metal elastic contacts and the electric connecting points in the concave holes, so that the combination body of the electronic building blocks and the function circuit of the combination body are formed.

The invention belongs to the technical field of inorganic nanomaterial preparation and discloses a silver rhodanide/polyacid nano composite material preparation method. The method includes steps: adding thiocyanic acid or thiocyanate with polyacid or polyacid salt into water to form solution A; adding silver salt into water to form solution B; mixing the solution A with the solution B, performingreaction for 0.5-5h, and filtering to obtain a product; washing the product with water or ethyl alcohol, and drying to obtain a silver rhodanide/polyacid nano composite material. The silver rhodanide/polyacid nano composite material is prepared by one-step coprecipitation, controllability in composition and particle size is realized, and the problem of complexity of a composite material preparation process is solved; the preparation method and process are simple, convenient, environmentally harmless, suitable for large-scale industrial production and extensive in application prospect; the prepared silver rhodanide/polyacid nano composite material is excellent in performance and high in structural stability.

The invention provides a method for preparing a P(VDF-DB)-g-S-C3H6-SO3H proton exchange membrane material. The method comprises the following steps: firstly, dissolving P(VDF-CTFE) and a catalyst intoa certain solvent; stirring and reacting for a certain time under a certain temperature condition; separating out a polymer P(VDF-DB) from de-ionized water; then, dissolving the P(VDF-DB), sodium thiosulfate and a catalyst into a certain solvent at the same time; after stirring and reacting for a certain time under a certain temperature condition, separating out a polymer in chloroform; decompressing and filtering to obtain a yellow polymer; sufficiently immersing the obtained yellow polymer by utilizing a hydrochloric acid solution (with the pH (Potential of Hydrogen) of 3); then decompressing and filtering and repeatedly immersing by utilizing methanol to remove unreacted organic matters and byproducts thereof; dissolving a washed product into acetone and sufficiently dissolving; then carrying out precipitation by utilizing n-hexane, and decompressing and filtering; finally, drying in vacuum until the weight is constant. The method provided by the invention has the advantages of simple technology, moderate conditions and easiness for obtaining the high-purity target product, and has a good industrial application prospect.

The invention discloses a thin film transistor array substrate, a preparation method for the same and a display device of the thin film transistor array substrate. The problem that the manufacturing process of the existing thin film transistor array substrate is complicated is solved. According to an embodiment of the invention, the thin film transistor array substrate comprises a plurality of pixel units, wherein each pixel unit comprises a common electrode; patterns of the common electrodes are slit-shaped; each common electrode comprises a strip-shaped electrode and a slit; the strip-shaped electrode in each common electrode can reflect light rays emitted in the strip-shaped electrode; and the slit in each common electrode can transmit light rays emitted in the slit. By using the thin film transistor array substrate, the strip-shaped electrodes in the common electrodes can serve as reflecting areas of the array substrate, and the slits of the common electrodes can serve as transmitting areas of the array substrate, so that the semi-transmitting and semi-reflecting characteristic is realized. Because the slit-shaped common electrodes can be manufactured by using a mask process, the manufacturing process is simplified.