Method for manufacturing trench type power semiconductor element
A technology of power semiconductors and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increased switching loss, unfavorable high-frequency circuits, and limited switching speed of power-type metal-oxide-semiconductor field-effect transistors, etc. , to ease the electric field distribution and increase the breakdown voltage
Active Publication Date: 2021-11-30
SUPER GROUP SEMICON
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Problems solved by technology
If the gate / drain capacitance is too high, the switching loss will increase, which will limit the switching speed of the power MOSFET, which is not conducive to the application in high-frequency circuits.
Method used
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Embodiment Construction
[0050] Please refer to figure 1 , which shows a flow chart of a trench power semiconductor device according to one embodiment of the present invention. Also, please refer to Figure 2A to Figure 2O , respectively depict the partial cross-sectional schematic diagrams of the trench power semiconductor device in each manufacturing step according to an embodiment of the present invention.
[0051] Such as figure 1 As shown, in step S100, an epitaxial layer is formed on a substrate, and in step S200, a protective layer is formed on a surface of the epitaxial layer. Please refer to Figure 2A to Figure 2B .
[0052] Such as Figure 2A As shown, the epitaxial layer 11 is formed on the substrate 10 , wherein the epitaxial layer 11 has a surface 11s away from the substrate 10 .
[0053] The substrate 10 has a high concentration of impurities of the first type conductivity, so as to serve as the drain region of the trench power semiconductor device. The aforementioned first-type ...
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A manufacturing method of a trench type power semiconductor element is used to form a trench type power semiconductor element with a shield electrode and a gate electrode in the trench. The manufacturing method of the trench type power semiconductor device at least includes forming a trench gate structure in the trench of the epitaxial layer. The trench gate structure has a shielding electrode, a gate located above the shielding electrode, and an inter-electrode dielectric layer between the shielding electrode and the gate, and the step of forming the trench gate structure at least includes: forming a cover covering the an insulating layer on the inner wall surface of the trench; and before the step of forming the inter-electrode dielectric layer, forming an initial spacer layer, wherein the initial spacer layer has a first sidewall portion and a second sidewall portion respectively covering the two inner sidewall surfaces of the insulating layer In the side wall portion, the bottom end of the first side wall portion and the bottom end of the second side wall portion are separated from each other, and both the first side wall portion and the second side wall portion have extension portions protruding from the epitaxial layer.
Description
technical field [0001] The invention relates to a method for manufacturing a power transistor, and in particular to a method for manufacturing a trench-type power semiconductor element with a shielding electrode. Background technique [0002] The working loss of the existing trench type Power Metal Oxide Semiconductor Field Transistor (Power Metal Oxide Semiconductor Field Transistor, Power MOSFET) can be divided into two categories: switching loss and conducting loss. The capacitance value of the drain (Cgd) is an important parameter affecting the switching loss. If the gate / drain capacitance value is too high, the switching loss will increase, which will limit the switching speed of the power MOSFET, which is not conducive to the application in high-frequency circuits. [0003] The existing trench power MOSFET has a shielding electrode located in the lower half of the gate trench to reduce the gate / drain capacitance without sacrificing the on-resistance ( on-resistance) ...
Claims
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IPC IPC(8): H01L29/78H01L29/06H01L29/423H01L21/336
CPCH01L29/0603H01L29/0684H01L29/42356H01L29/66477H01L29/78H01L29/407H01L29/41H01L29/42376H01L29/41766H01L29/7813H01L29/66734H01L29/513
Inventor 许修文叶俊莹倪君伟李元铭
Owner SUPER GROUP SEMICON