Semiconductor device and preparation method thereof
A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve problems such as stress damage, achieve the effects of alleviating stress damage, reducing pressure, and improving work stability
Inactive Publication Date: 2019-01-18
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
[0006] In view of this, an embodiment of the present invention provides a semiconductor device and a manufacturing method thereof to solve the problem of stress damage caused by the structure of the existing semiconductor device
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Embodiment Construction
[0057] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0058] In the description of the present invention, it should be noted that the terms "first", "second", and "third" are used for description purposes only, and should not be understood as indicating or implying relative importance.
[0059] In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as there is no conflict with each other.
[0060] An embodiment of the present invention provides a semiconductor devi...
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Abstract
The invention relates to the technical field of semiconductors, and provides a semiconductor device and a manufacturing method thereof, wherein, the semiconductor device comprises a substrate of a first conductivity type; A first semiconductor layer of a second conductivity type formed on the substrate, the second conductivity type being opposite to the first conductivity type; A plurality of discontinuous first insulating protrusions formed on the first semiconductor layer; A first metal electrode layer formed on a plurality of discontinuous first insulating projections. Through a number of discontinuous first insulating projections, such that the first metal electrode layer is a concave-convex structure with respect to the substrate, As a vertical crimp force is apply to that surface ofthe first metal electrode layer, The first metal electrode layer is transversely deformed due to the presence of the protrusions, and the compression force acting on the first semiconductor layer andthe substrate is reduced by the transversely deformed dispersed portion of the first metal electrode layer to alleviate the stress damage of the device caused by the vertical pressure.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a preparation method thereof. Background technique [0002] Semiconductor devices are electronic devices that use the special electrical properties of semiconductor materials to complete specific functions, and can be used to generate, control, receive, transform, amplify signals and perform energy conversion. Its application is extremely wide, from the electronic manufacturing industry in the consumer field (including computers, digital products, white goods, etc.) to industrial control (electrical equipment, rail transit, electric vehicles, photovoltaics, etc.) and almost all fields. [0003] The packaging modes of semiconductor devices mainly include welding and crimping. Among them, under long-term work or environmental aging conditions, soldering packaging is likely to cause excessive concentration of thermal stress on the welding part, resu...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L29/40H01L29/739H01L29/772H01L29/868
CPCH01L29/40H01L29/7393H01L29/772H01L29/868
Inventor 刘钺杨金锐和峰董少华刘江冷国庆温家良吴军民潘艳
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD