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Transient voltage inhibition diode and preparation method thereof

A transient voltage suppression, diode technology, applied in the direction of diodes, circuits, electrical components, etc., can solve the problem of high clamping voltage

Active Publication Date: 2019-02-01
上海芯导电子科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The characteristics of traditional transient voltage suppression diode devices are that the higher the breakdown voltage, the higher the clamping voltage.

Method used

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  • Transient voltage inhibition diode and preparation method thereof
  • Transient voltage inhibition diode and preparation method thereof
  • Transient voltage inhibition diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] In a preferred embodiment, as figure 1 As shown, a transient voltage suppressor diode is proposed, which may include:

[0036] The substrate 10 is P-type, including a front side and a back side respectively defining a central region CE and an edge region EG;

[0037] The protective layer 20 covers the edge region EG of the front surface of the substrate 10 and exposes the surface in the central region CE of the front surface of the substrate 10;

[0038] A first N well W1 is prepared in the central region CE of the front surface of the substrate 10 where the protective layer 20 is exposed, and several gate structures GD are prepared in the first N well;

[0039] The substrate 10 is prepared with a second N-well W2 in the central region CE on the back surface, and an annular P-well W3 surrounding the second N-well W2 in the edge region EG;

[0040] The first metal layer M1 covers the central region CE of the front surface of the substrate 10;

[0041] The second metal...

Embodiment 2

[0050] In a preferred embodiment, as figure 2 As shown, a preparation method of a transient voltage suppression diode is also proposed, and the schematic diagram of the structure formed by each step can be shown as Figure 3-7 Shown, wherein, this preparation method can comprise:

[0051] Step S1, providing a P-type substrate 10, the substrate 10 includes a front side and a back side respectively defining a central region CE and an edge region EG, and a protective layer 20 is covered on the front side edge region EG of the substrate 10 , the protective layer 20 exposes the surface in the central region CE of the front surface of the substrate 10, and a first N well W1 is prepared in the central region CE of the front surface of the substrate 10 exposed by the protective layer 20;

[0052] Step S2, preparing and forming several gate structures GD in the first N well W1;

[0053] Step S3, preparing a first metal layer M1 covering the central region CE of the front surface of ...

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Abstract

The invention relates to a transient voltage inhibition diode, and belongs to the technical field of semiconductors. The transient voltage inhibition diode comprises a P type substrate, a protective layer, first and second N wells, an annular P well, and first and second metal layers; the substrate comprises a front side and a back side, and each of the front and back sides includes defined central and edge areas; the protective layer covers the edge area of the front side of the substrate, and a surface in the central area of the front side is exposed out of the protective layer; the first Nwell is prepared in the central area of the front side, and grid structure are prepared in the first N well; the second N well is prepared in the central area of the back side of the substrate, and the annular P well surrounding the second N well is prepared in the edge area of the back side; the first metal layer covers the central area of the front side of the substrate; and the second metal layer covers the back side of the substrate. The invention also provides a preparation method of the transient voltage inhibition diode. Thus, the breakthrough voltage is sufficiently high, the clamp voltage is sufficiently low, and the diode can be adapted to products with a rapid charging function.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a transient voltage suppression diode and a preparation method thereof. Background technique [0002] With the continuous enrichment of smart phone application modules, battery life has become a bottleneck. The capacity of mobile phone lithium batteries has also increased from a few hundred milliamp hours in the feature phone era to more than several thousand milliampere hours. In the case of such a large lithium battery capacity, to ensure that the mobile phone is fully charged within a few hours, fast charging technology becomes inevitable. [0003] In the case of such a large lithium battery capacity, to ensure that the mobile phone is fully charged within a few hours, fast charging technology becomes inevitable. At present, the output voltage of the mobile phone fast charging charger varies from 5V, 7V, 9V, 12V, and the charging current is 1.5 -2.5 amps vary. Such a...

Claims

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Application Information

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IPC IPC(8): H01L29/861H01L29/06H01L21/329
CPCH01L29/0603H01L29/0684H01L29/66204H01L29/861
Inventor 孙春明陈敏戴维虞翔袁琼刘宗金夏杰
Owner 上海芯导电子科技股份有限公司