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SiC MOSFET driving protection circuit and protection method thereof

A technology for driving protection circuits and capacitors, used in electrical components, electronic switches, pulse technology, etc., to achieve the effects of fast turn-on speed, thorough protection, and increased reliability

Active Publication Date: 2019-02-01
北京长峰天通科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Aiming at the existing technical problems, the present invention provides a SiC MOSFET drive protection circuit and its drive protection method. The drive circuit can solve the problem of wrong turn-on of the SiC MOSFET due to various reasons during the turn-off period. At the same time, it can be processed by The device monitors the frequency of the false turn-on suppression signal, judges the current working environment of the circuit, and adjusts the switching frequency and working status of the SiC MOSFET in real time, which can greatly increase the reliability of the circuit and prolong the life of the device

Method used

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  • SiC MOSFET driving protection circuit and protection method thereof
  • SiC MOSFET driving protection circuit and protection method thereof
  • SiC MOSFET driving protection circuit and protection method thereof

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Embodiment Construction

[0051] In order to better explain the present invention and facilitate understanding, the present invention will be described in detail below through specific embodiments in conjunction with the accompanying drawings.

[0052] Such as figure 1 , 2 Shown is a structural block diagram and an overall circuit diagram of the SiC MOSFET drive protection circuit of the present invention. The circuit includes a sampling comparison module, a signal latch and logic control module, an external control module and an execution module for suppressing false opening.

[0053] Such as image 3 As shown, the sampling comparison module includes a reference voltage signal acquisition circuit, a gate signal acquisition circuit and a comparator AR1. The reference voltage signal acquisition circuit composed of capacitor C1, resistor R1, Zener diode D1 and power supply VCC is input to the positive input terminal of comparator AR1. Wherein, the first end of the capacitor C1 and the resistor R1 are...

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Abstract

The invention belongs to the technical field of circuit control, and in particular relates to a SiC MOSFET driving protection circuit and a driving protection method thereof. The circuit comprises a sample comparison module, a signal latch and logic control module, an external control module, and a false turn-on suppression execution module. The driving circuit can solve the false turn-on problemcaused by various reasons during the SiC MOSFET as well as monitoring the frequency of a false turn-on suppression signal through a processor so as to judge the current circuit working environment andadjust the on-off frequency and the working state of the SiC MOSFET in real time, thereby greatly increasing the reliability of the circuit and prolonging the service life of the device.

Description

technical field [0001] The invention belongs to the technical field of circuit control, and in particular relates to a SiC MOSFET drive protection circuit and a drive protection method thereof. Background technique [0002] As a new type of material, SiC material has excellent physical and chemical properties such as large band gap, high breakdown voltage, and high thermal conductivity. By using power devices made of SiC materials, people can greatly increase the switching speed of the device and reduce the device. power consumption, reducing the size of the device. SiC MOSFET, as the current mainstream power device of SiC material, has received extensive attention in the field of power electronics. [0003] In order to give full play to the characteristic advantages of SiC MOSFET, increase the switching speed of the device, reduce the power consumption of the device and reduce the size of the device, it is necessary to clarify the switching characteristics and driving char...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/687H03K17/16
CPCH03K17/165H03K17/687H03K2217/0081
Inventor 任强赵雪峰席小鹭
Owner 北京长峰天通科技有限公司
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