Prototype of sapphire ultra-high temperature pressure sensor and its preparation method

A pressure sensor, sapphire technology, applied in the direction of measuring fluid pressure, fluid pressure measurement using capacitance changes, fluid pressure measurement using inductance changes, etc., can solve problems such as gaps and limited operating temperature ranges

Active Publication Date: 2020-08-28
江西伟嘉晶创光电科技有限公司
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Problems solved by technology

Existing high-temperature pressure sensors are mainly based on materials such as silicon, SOI, silicon carbide, and ceramics. The signal is read mainly through electrical leads. The material properties of the sensor and the signal reading method limit its working temperature range and cannot be used for a long time. Stable realization of in-situ dynamic testing of pressure parameters in ultra-high temperature environments above 1200°C, compared with the application of high-temperature and harsh environments in the manufacture of large-scale equipment such as advanced engines and gas turbines, there is still a big gap

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  • Prototype of sapphire ultra-high temperature pressure sensor and its preparation method
  • Prototype of sapphire ultra-high temperature pressure sensor and its preparation method
  • Prototype of sapphire ultra-high temperature pressure sensor and its preparation method

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[0034] In order to make the objects and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0035] Such as figure 1 and Figure 8 As shown, the embodiment of the present invention provides a prototype of a sapphire ultra-high temperature pressure sensor, which is divided into a high temperature zone, a heat insulation zone and a low temperature zone, including a sapphire passive high temperature resistant pressure sensitive element, a long-distance wireless transmission module, and a characteristic signal wireless Read the storage module, the sapphire passive high-temperature resistant pressure sensitive element is provided with a sensitive sealed cavity 1, and the outer end of the sensitive sealed cavity 1 is equipped with a heat-res...

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Abstract

The invention discloses a prototype of a sapphire ultra-high temperature pressure sensor. The prototype of the sapphire ultra-high temperature pressure sensor comprises a sapphire passive high-temperature-resistant voltage-sensitive element, a long-distance wireless transmission module and a characteristic signal wireless reading and storing module, wherein an anti-thermal impact plate is arrangedat one end of the outer side of the pressure sensor prototype, and a heat dissipation plate is installed at the other end of the pressure sensor prototype; the sapphire passive high-temperature-resistant voltage-sensitive element is installed on one side inside the pressure sensor prototype; the sapphire passive high-temperature-resistant voltage-sensitive element is composed of a high-temperature-resistant sensitive capacitor and a high-temperature wireless transmission inductance coil; a high-temperature-resistant thermal insulation material layer is arranged between the passive high-temperature-resistant pressure-sensitive element and the long-distance wireless transmission module; and a high-temperature-resistant test antenna is installed in the characteristic signal wireless readingand storing module. The passive high-temperature-resistant pressure-sensitive module of the sensor prototype can work at a super-high temperature environment of 1,200 DEG C or above, and the wirelessreading and storing module works in a high-temperature environment so as to realize in-situ testing of the characteristic signals in the ultra-high-temperature environment.

Description

technical field [0001] The invention relates to the field of sensor prototypes, in particular to a sapphire ultra-high temperature pressure sensor prototype and a preparation method thereof. Background technique [0002] With the continuous development of the performance of large-scale equipment such as advanced aero-engines and gas turbines, the requirements for the monitoring and testing capabilities of working parts in ultra-high temperature environments are increasing. Among them, the testing of pressure parameters in ultra-high temperature environments above 1200 ° C has gradually become a constraint for these large-scale equipment. The key technology "bottleneck" of manufacturing. Existing high-temperature pressure sensors are mainly based on materials such as silicon, SOI, silicon carbide, and ceramics. The signal is read mainly through electrical leads. The material properties of the sensor and the signal reading method limit its working temperature range and cannot ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L9/10G01L9/12G01L19/06G01L19/08
CPCG01L9/10G01L9/12G01L19/0609G01L19/0672G01L19/0681G01L19/086
Inventor 李晨熊继军
Owner 江西伟嘉晶创光电科技有限公司
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