Semiconductor structure and method of forming same

Abstract

The invention provides a semiconductor structure and a method of forming the same. The method comprises the steps of providing a substrate having a dielectric layer thereon, the dielectric layer having an opening therein; forming interconnect lines within the opening, the interconnect lines being exposed from the top surface of the dielectric layer; forming a passivation layer on the dielectric layer, the density of the passivation layer being greater than the density of the dielectric layer; and forming a barrier structure on the passivation layer and the interconnect lines. The semiconductordevice formed by the method has better performance.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the development of semiconductor technology, the integration level of VLSI chips has reached hundreds of millions or even billions of devices, and multilayer metal interconnection technology with more than two layers is widely used. Traditional metal interconnects are made of aluminum metal, but with the continuous reduction of device feature size in integrated circuit chips, the circuit density in metal interconnect lines continues to increase, and the required response time continues to decrease. Traditional aluminum Interconnection wires can no longer meet the requirements, and copper interconnection wires are gradually replacing aluminum interconnection wires. Compared with aluminum, copper has lower resistivity and higher anti-electromigration characteristics, which can redu...

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Problems solved by technology

[0004] However, when the barrier layer is formed, it is easy

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