38results about How to "Improve isolation performance" patented technology

The invention discloses a dual-polarization radiating element comprising a metal reflection baseplate and two pairs of vibrators arranged on the metal reflection baseplate, wherein vibrator arms of each pair of vibrators are mutually parallel or in the same line, and vibrator arms between the two pairs of vibrators are mutually perpendicular. The invention also discloses a broadband base station antenna which is formed by the linear arrangement of a plurality of dual-polarization radiating elements. The dual-polarization radiating element disclosed by the invention has the following advantages that the shapes of the vibrator arms are matched with a feeding mode of the vibrators, an integral forming mode of the stamping and bending of a metal plate is adopted, and the cost is greatly reduced; and the space between the vibrators is increased, meanwhile, the distance between the radiating elements is also increased, therefore the design difficulty of the partition degree of the antennae is reduced; and the characteristics of simple and compact structure, high performance, easiness of manufacture, convenience for installation and use, wide bandwidth, high gain, favorable cross polarization ratio, and favorable partition performance are achieved.

The invention provides a dual-polarized antenna applicable to a wireless local area network and a manufacturing method of the dual-polarized antenna. The antenna comprises two dielectric plates and a grounding plate, which are the same square and overlapped and fixedly connected with one another in the same manner; the upper surface of the first dielectric plate is a metal radiation patch located at the center; two micro-strip feeder lines, which are vertical with each other and are respectively located on the two adjacent edges of a square, are arranged between the two dielectric plates; symmetrical convex rectangles are formed on the four edges of the metal radiation patch; and four cross-shaped grooves in center symmetry are arranged on the grounding plate. The manufacturing method of the antenna comprises the following steps of: respectively manufacturing single-faced and double-faced copper-coated plates to be square plates which are taken as the first and second dielectric plates; etching the first dielectric plate to obtain the metal radiation patch; etching the second dielectric plate to obtain the two micro-strip feeder lines, wherein the bottom face of the second dielectric plate is taken as the grounding plate; machining the four cross-shaped grooves in center symmetry on the bottom face of the grounding plate; connecting the dielectric plates in a laminated manner; and mounting a feeder interface. The dual-polarized antenna provided by the invention is simple in structure and small in thickness, is obviously minimized while property indexes are improved and is strong in maneuverability, and antenna parameters are convenient to adjust.

The invention discloses a method for performing gold backing on a printed circuit board of a Ku waveband microstrip type switch circuit, which selectively performs gold backing treatment on the printed circuit board in the process of performing the gold backing treatment on the printed circuit board in the Ku waveband microstrip type switch circuit so as to separate the part between the printed circuit board and the back face of a microstrip line grounded base plate, inhibit the coupling effect of microwave signals, avoid the introduction of more parasitic parameters in the circuit, and improve the isolation performance of the microstrip type switch circuit. The method effectively inhibits the coupling effect of the microwave signals, avoids the introduction of more parasitic parameters inthe circuit, and finally improves the isolation performance of the microstrip type switch circuit. The method has the characteristics of simple manufacturing, good repeatability, low cost, wide application range and the like.

The embodiment of the invention discloses an interface circuit and a method for inhibiting electromagnetic interference, which relate to interface circuits of communication equipment, and are mainly used for equipment such as ADSL and ISDN performing communication through copper wire loops. The interface circuit for inhibiting electromagnetic interference comprises a transformer, the transformer comprises a primary coil and a secondary coil, the secondary coil is provided with an intermediate tap, and the intermediate tap is earthed through a high frequency filter. The method for inhibiting electromagnetic interference conducts high frequency noise to an earthing point through the high frequency filter on the intermediate tap of the secondary coil of the transformer, thereby filtering the high frequency noise. The interface circuit and the method solve the problem that an interface circuit of the prior communication equipment has weaker electromagnetic interference inhibition function.

The invention discloses a memory and a forming method thereof. The forming method of the memory comprises the steps: providing a substrate, and forming a plurality of bit line structures which are arranged at intervals on the substrate; forming a covering layer at least covering the side walls of the bit line structures; forming filling layers on the substrate, wherein gaps between adjacent bit line structures are filled with the filling layers; etching the filling layers to the surface of the substrate to form contact holes, wherein the filling layers with partial thickness are arranged between the contact holes and the covering layer; forming a conductive plug in each contact hole; removing the remaining filling layers; and filling an insulating layer on the substrate, sealing a space between the covering layer and the conductive plug by the insulating layer, and forming an air gap between the covering layer and the conductive plug. The performance of the memory is improved.

The invention discloses a miniaturized broadband power divider circuit based on spur lines. The circuit includes a first port (1), a second port (2), a third port (3) and an isolation resistor (R1), wherein the isolation resistor (R1) is arranged between the second port (2) and the third port (3), a transmission path from the first port (1) to the second port (2) adopts a microstrip line, a transmission path from a first port (1) to a third port (3) adopts a microstrip line, a first spur line (20) is arranged on the microstrip line of the transmission path from the first port (1) to the second port (2), a second spur line (30) is arranged on the microstrip line of the transmission path from the first port (1) to the third port (3), and the first spur line (20) and the second spur line (30) are used for reducing the size of the power divider, reducing insertion loss and expanding the bandwidth of the power divider. The relative electrical length of the microstrip lines increase based on the spur lines, the actual length is shortened, the size of the power divider is reduced, and stepped impedance lines and branch lines are equivalently introduced to the transmission paths to expand the bandwidth of the power divider, and the power divider is smaller in size than a traditional Wilkinson power divider, and has larger bandwidth and smaller insertion loss.

The invention relates to a low noise high conversion gain up-conversion mixer. The up-conversion mixer is characterized by comprising an input transconductance unit, a switch unit, and a load unit, wherein the input transconductance unit converts a medium-frequency voltage signal (IF+ and IF-) into an RF current signal, the switch unit changes frequency of a medium-frequency current signal outputby the input transconductance unit through current commutating under control of on and off of a local oscillator voltage signal (LO+ and LO-), so as to generate an RF current signal, and the load unitconverts the current signal output by the switch unit into an RF voltage signal, and a differential RF voltage signal (RF+ and RF-) is output between the switch unit and the load unit.

The present invention discloses a miniature power divider based on a high Q-value tunable active inductor. The power divider comprises an input port (P1), a capacitive unit, a first active inductor, asecond active inductor, an isolation resistor, a first output port (P2) and a second output port (P3). The first active inductor and the second active inductor have the identical structures which areimplemented based on the gyrator theory, and each is formed by a positive transconductance amplifier, a negative transconductance amplifier, a Cascode current mirror structure forming a feedback loopand a dual external voltage biasing circuit. Compared to a traditional passive power divider, the novel power divider employs the active inductor to replace the passive spiral inductor to achieve high quality factor (Q value), a tunable high work frequency range and a tunable inductive value so as to greatly reduce the chip area while the power consumption is not greatly increased, weaken the substrate parasitic effect influence and achieve miniaturization, low-insertion power consumption and high isolation performance.

The invention discloses a shallow trench isolation structure and a manufacturing method thereof. The manufacturing method comprises the following steps of: providing a semiconductor substrate and forming a shallow trench on the semiconductor substrate; forming a liner layer which is made of silicon oxynitride in the shallow trench; and forming a filling oxide layer for filling the shallow trench on the liner layer. According to the technical scheme, the liner layer which is made of the silicon oxynitride is formed before the shallow trench is filled, so that the smoothness of the shallow trench and a stress environment in the shallow trench can be improved, the liner layer and the semiconductor substrate below the liner layer are prevented from being damaged during implementation of subsequent process manufacturing, isolation performance of the shallow trench isolation structure is enhanced, the electrical property of a semiconductor device is improved, and the yield of a semiconductor product is further improved.

The invention provides a double-pole double-throw radiofrequency switch. The double-pole double-throw radiofrequency switch is characterized in that a first arm (A1) is connected between a first radiofrequency end (RF1) and a first antenna end (ANT1); a second arm (A2) is connected between the first antenna end (ANT1) and a second radiofrequency end (RF2); a third arm (A3) is connected between thesecond radiofrequency end (RF2) and a second antenna end (ANT2); a fourth arm (A4) is connected between the second antenna end (ANT2) and the first radiofrequency end (RF1); a first inductor (L1) anda second inductor (L2) are connected in series between the first antenna end (ANT1) and the second antenna end (ANT2); the first to fourth arms (A1-A4) have completely the same structure; each arm comprises two capacitors and a switch device; and the switch devices are connected in series between the two capacitors. Compared with the prior art, the double-pole double-throw radiofrequency switch has the advantages of low insertion loss, high isolation performance and smaller device size.

The embodiment of the invention discloses a WSS. The arrangement scheme of optical fiber array output ports of the WSS is that the centers of the output ports are arranged along a curve or a combinedline comprising line segments, and a straight line connected with the centers of any two output ports on the curve or the combined line cannot pass through an input port. A light beam received from the input port is diffracted to the output port through an LCoS panel, and a straight line through which each order of diffraction order generated by diffraction passes intersects with the curve or theline segment and has only one intersection point. According to the WSS provided by the embodiment of the invention, the number of output ports and the isolation performance can be effectively improved, and the practicability is high.

The invention provides a slot antenna device and electronic equipment. The slot antenna device comprises a plurality of radiation slots and a feeder device which is used for feeding the radiation slots. The radiation slots are formed in the position, close to the metal enclosure frame, of the metal rear cover plate and do not penetrate through the metal enclosure frame; the multiple radiation slots are arranged at intervals in the width direction of the metal rear cover plate in the mode that the length direction of the radiation slots is parallel to the width direction of the metal rear coverplate. A plurality of radiation gaps which do not penetrate through a metal enclosure frame are formed in a metal rear cover plate; the radiation slots are arranged along the width direction of the metal rear cover plate, a plurality of antennas can be integrated in the same area of the metal rear cover plate, the antenna scheme design requirement of the terminal can be met only by slotting on one side, and the structural strength of the metal rear cover and the integrity of the frame are ensured.

The invention relates to a multi-frequency high-isolation MIMO antenna. The multi-frequency high-isolation MIMO antenna is characterized in that three identical hourglass type isolation frames and a symmetrical tri-forked isolation strip are arranged among three identical unit antennas; each unit antenna is formed by a dielectric substrate, an upper surface good conductor layer and a lower surfacegood conductor layer; the upper surface good conductor layer is a street lamp type monopole structure; the lower surface good conductor layer is a isosceles trapezoid structure; each hourglass type isolation frame is a symmetrical polygon frame type structure in which the middle part is retracted inward; the tri-forked isolation strip is formed through connection of three rectangular branch knots; and the three identical hourglass type isolation frames, the symmetrical tri-forked isolation strip and the upper surface good conductor layer of the each unit antenna are located on the same plane.Compared with a current multi-frequency MIMO antenna, the multi-frequency high-isolation MIMO antenna uses the hourglass type isolation frames and the symmetrical tri-forked isolation strip, thus effectively implementing the high-isolation performance, further improving the performance of antenna and expanding the impedance bandwidth of antenna. The multi-frequency high-isolation MIMO antenna hasthe advantages of being preferable in radiating property, being simple in structure, being easy for processing, being low in mutual coupling, being compatible for multi-frequency, and being omnidirectional in radiation.

The invention provides a 5G dual-band MIMO antenna based on two units. The 5G dual-band MIMO antenna comprises an artificial magnetic conductor, a first dual-band antenna and a second dual-band antenna with the same structure as the first dual-band antenna and arranged vertically. The first dual-band antenna is composed of a first upper antenna arm, a circular dielectric substrate and a first lower antenna arm. The first upper antenna arm is composed of a first upper low frequency resonant branch and a first upper high frequency resonant branch. The first lower antenna arm has the same structure as the first upper antenna arm and is rotationally symmetrical about the center of the circular dielectric substrate by 180 degrees. At one side of that edge of the circular dielectric plate, a ''heart'' shape metal patch of the first upper low frequency resonant branch is formed, and is connecte with a metal patch of a quarter arc section of the first upper high frequency resonant branch through a rectangular metal patch. The invention has the characteristics of small size, high isolation and high gain, and has good practical value in the mobile communication of indoor base station becauseof the core-shaped metal patch structure, artificial magnetic conductor and polarization orthogonal arrangement mode.

The invention discloses a millimeter wave filtering frequency-selecting assembly, and the assembly comprises: a first single-pole N-throw switch which receives a millimeter wave signal and outputs themillimeter wave signal through one non-fixed output port; a filter bank which comprises N-1 dielectric filters which are connected in parallel between the two switches, wherein the millimeter wave signal output by the first single-pole N-throw switch is filtered by using a corresponding dielectric filter to output a filtered signal; and a second single-pole N-throw switch which receives the filtering signal through one non-fixed input port and outputs the filtering signal through the output port. Each of the first single-pole N-throw switch and the second single-pole N-throw switch comprisesa multi-coupling coil circuit and a transistor control circuit, port isolation is realized by utilizing the multi-coupling coil circuit, and a port load is adjusted by utilizing a load switching technology; and the first single-pole N-throw switch is provided with a fixed output port connected with a 50-ohm load, and the second single-pole N-throw switch is provided with a fixed input port connected with the 50-ohm load. According to the invention, low out-of-band rejection, low insertion loss and high isolation can be realized.

One embodiment of the invention discloses a ferrite switch assembly cascade feed network and a forming method thereof, the ferrite switch assembly cascade feed network comprises a printed board wire,an insulating substrate, a microwave absorbing material and a metal cavity, the microwave absorbing material is arranged on the metal cavity; the insulating base material is arranged on the microwaveabsorbing material; and the printed board wire is embedded into the surface, far away from the microwave absorbing material, of the insulating base material. By absorbing the microwave signals coupledin the cascade feed network, the high isolation of the ferrite switch assembly is improved, and the isolation performance of the ferrite switch assembly is improved.

The invention discloses a miniature power divider based on a high-Q tunable active inductance. The miniature power divider includes an input port (P1), a capacitor unit, a first active inductance, a second active inductance, an isolation Resistor, first output port (P2) and second output port (P3). The first active inductor and the second active inductor have exactly the same structure and are realized based on the gyrator principle. They are composed of a positive transconductance amplifier, a negative transconductance amplifier, a Cascode current mirror structure that forms a feedback loop, and a double external voltage Bias circuit configuration. Compared with the traditional passive power divider, the new type of power divider proposed by the present invention adopts an active inductance to replace the passive spiral inductance, and realizes high quality factor (Q value), working frequency range and inductance value tunable, without increasing the power consumption. When the power consumption is too large, the chip area is greatly reduced, and the influence of the parasitic effect of the substrate is weakened, so that the power divider can achieve miniaturization, low insertion loss and high isolation performance.

The invention discloses a miniaturized broadband power divider circuit based on spur lines. The circuit includes a first port (1), a second port (2), a third port (3) and an isolation resistor (R1), wherein the isolation resistor (R1) is arranged between the second port (2) and the third port (3), a transmission path from the first port (1) to the second port (2) adopts a microstrip line, a transmission path from a first port (1) to a third port (3) adopts a microstrip line, a first spur line (20) is arranged on the microstrip line of the transmission path from the first port (1) to the second port (2), a second spur line (30) is arranged on the microstrip line of the transmission path from the first port (1) to the third port (3), and the first spur line (20) and the second spur line (30) are used for reducing the size of the power divider, reducing insertion loss and expanding the bandwidth of the power divider. The relative electrical length of the microstrip lines increase based on the spur lines, the actual length is shortened, the size of the power divider is reduced, and stepped impedance lines and branch lines are equivalently introduced to the transmission paths to expand the bandwidth of the power divider, and the power divider is smaller in size than a traditional Wilkinson power divider, and has larger bandwidth and smaller insertion loss.

The invention provides a method for improving threshold voltage adaptation and alternating current performance of a FinFET device. The method comprises the steps of enabling a grid structure to be located between a source region epitaxial region and a drain region epitaxial region; enabling a first interlayer dielectric layer to cover the grid structure; planarizing the grid structure to expose the top of the grid; performing back etching on the metal grid and the work function layer to form a groove; depositing a first barrier layer covering the groove, the grid structure and the first interlayer dielectric layer; forming an oxygen plug in the groove, and depositing a second barrier layer covering the first interlayer dielectric layer, the grid structure and the oxygen plug; forming a second interlayer dielectric layer on the second barrier layer; and leading out contact lines respectively from the source region epitaxial region and the drain region epitaxial region. The alternating current performance of the device can be improved; fluorine is prevented from entering the high-K dielectric layer and reacting with oxygen to deteriorate the threshold voltage of the device; the isolation performance from the grid electrode to the metal layer is improved, and the yield of the SRAM and the logic circuit is increased; the process is simplified; the occurrence of cavities in the embolism is avoided; and the blocking effect is improved.

The invention discloses an intelligent wearable device which comprises a bottom shell, a middle frame and a circuit board. The circuit board comprises a plurality of radio frequency interfaces; the middle frame is an annular or partial annular structure, is located on one side of the bottom shell and forms a accommodating space after being connected with the bottom shell; the circuit board is accommodated in the accommodating space; the outer surface of the middle frame is provided with a plurality of sections of mutually isolated radiation antenna bodies along the annular direction of the middle frame, and the radiation antenna bodies are plane conductors, are fixedly connected with the middle frame and are grounded; and the inner surface of the middle frame is provided with feed antennabodies at the positions corresponding to the radiation antenna bodies, and the feed antenna bodies are planar conductors, are fixedly connected with the middle frame and are connected with the radio frequency interfaces respectively. According to the invention, the plurality of mutually isolated antennas are arranged in the annular or partial annular middle frame to realize the function of a multi-band antenna so that enough isolation is provided between the antennas, and the isolation performance is improved; besides, the antennas are arranged on the inner surface and the outer surface of themiddle frame and are fixedly connected with the middle frame so that the occupied space is saved, and the size of the intelligent wearable device is reduced.

The invention discloses an antenna and electronic equipment, and is used for solving the technical problems of electronic equipment in the prior art that the lighting and thinning requirement of a laptop can not be met since antenna design occupies space so as to realize a technical effect that antenna receiving performance is guaranteed on the premise that the electronic equipment including mobile phones, tablet computers and the like meet the lighting and thinning requirement. The antenna comprises a current-conducting plate, a first insulation area and a first cable, wherein the first insulation area is a long and narrow area in a first direction on the current-conducting plate, and the first end of the first insulation area is communicated with the first edge of the current-conducting plate; the first cable is arranged on the current-conducting plate; and the first cable is directly connected with the first feeding area of the first insulation area, feeding stimulation is given to the first feeding area through the first cable, and a first high-frequency resonance magnetic field of which the frequency is first frequency and the coverage range is a first coverage range is formed in the first insulation area.

The present invention provides a multi-polar substrate electrical connector, which includes a male head and a female seat that are mated with each other, the male head includes a first insulating body, a first shielding shell fixed to the first insulating body, and At least two rows of first connecting terminals fixed on the first insulating body, and a first isolation plate located between at least two rows of the first connecting terminals and provided on the first insulating body for grounding; The female seat includes a second insulating body, a second shielding shell fixed to the second insulating body, at least two rows of second connection terminals fixed to the second insulating body, and at least two rows of the second A second isolation plate between the connection terminals and provided on the second insulating body for grounding. When the male head is mated with the female socket, the first isolation plate and the second isolation plate electrical contact. The invention can effectively improve the isolation performance of the connector.

The invention relates to a microstrip array antenna structure capable of improving isolation between antennas. The structure comprises a dielectric board; the front side of the dielectric board is provided with transmitting microstrip array antennas and receiving microstrip array antennas at intervals; the back surface of the dielectric board is a metal floor; first isolated antenna arrays and second isolated antenna arrays are introduced between the transmitting microstrip array antennas and the receiving microstrip array antennas; first metallized through holes are introduced between the transmitting microstrip array antennas and the first isolated antenna arrays; second metallized through holes are introduced between the receiving microstrip array antennas and the second isolated antenna array; and at least one circle of peripheral metallized through holes are formed along the outer sides of the transmitting microstrip array antennas and the receiving microstrip array antennas. Thefirst isolated antenna arrays and the second isolated antenna arrays are introduced between the transmitting microstrip array antennas and the receiving microstrip array antennas, so that the isolation performance is improved by 7.5dB under the condition that the distance between the transmitting and receiving antennas is unchanged, and the isolation between the transmitting and receiving antennasin a working frequency band is smaller than 70dB; and the structure is suitable to transmit and receive electromagnetic waves in a continuous wave radar system.

The invention relates to an 18G broadband waveguide circulator which comprises a waveguide cavity, wherein a cover plate is arranged on the waveguide cavity; three waveguide channels are distributed on the waveguide cavity; the three waveguide channels are distributed in a Y shape so as to form a Y-shaped waveguide structure; a boss structure is formed in a middle convergence point of the Y-shapedwaveguide structure; ferrite is mounted on the boss structure; the edge of the middle convergence point of the Y-shaped waveguide structure is of a round cavity structure; a plurality of mounting threaded holes are distributed in the waveguide cavity; and magnetic steel assemblies are connected onto the mounting threaded holes. Therefore, the distance from the magnetic steel units to the ferritecan be effectively adjusted, saturation magnetization is accurately adjusted, and the isolation performance is improved. According to the round cavity structure in the Y-shaped waveguide structure andthe dual-circular truncated cone structure, 30% of bandwidth can be obtained, the ferrite-bearing dielectric constant fluctuates in a range from 13 to 14.5, indicators are qualified, and convenienceis brought to batch production. The round cavity structure in the Y-shaped waveguide structure and the dual-circular truncated cone structure can be adjusted according to actual needs, and the waveguide circulator can be popularized to other frequency band ranges.

The invention provides a semiconductor structure and a method of forming the same. The method comprises the steps of providing a substrate having a dielectric layer thereon, the dielectric layer having an opening therein; forming interconnect lines within the opening, the interconnect lines being exposed from the top surface of the dielectric layer; forming a passivation layer on the dielectric layer, the density of the passivation layer being greater than the density of the dielectric layer; and forming a barrier structure on the passivation layer and the interconnect lines. The semiconductordevice formed by the method has better performance.