High-power-density four-output nanosecond-level rising edge square-wave output module

Abstract

The invention relates to a high-power-density four-output nanosecond-level rising edge square-wave output module, which comprises a housing and is characterized in that: a high-voltage linear circuit,an undervoltage protection circuit, an output prefabricated current detection resistor, a constant-current protection circuit and a control chip are arranged in the housing, and a two-stage topological structure is adopted; the control chip comprises a soft start circuit, an internal oscillation circuit, a maximum duty cycle limiting circuit and a light load mode circuit. The control chip adoptsLM5022, LM5000 and LM158; the two-stage topological structure is a single-ended flyback topology and high-voltage linear topology structure. The module mainly realizes the common function protection by the internal chip function, and the secondary Schottky diode rectification greatly improves the efficiency of the whole machine. At the same time, the enhancement of the chip function greatly reduces the peripheral protection circuits and control circuits, and reduces the module size, thus laying the technical foundation for the miniaturization and standardization of modules.

Description

technical field [0001] The invention belongs to the field of power amplifiers, and in particular relates to a high-power-density four-way output nanosecond-level rising-edge square-wave output module. Background technique [0002] At present, most power amplifier chips in China have fewer functions, larger MOS tubes, and lower efficiency, resulting in larger appearance and volume; moreover, power amplifiers are relatively small in power and the number of circuits is small, and the driving time is slow. At the same time, the switching boost module has a large volume and low efficiency. The present invention is based on this technology, mainly relying on the internal chip function to realize common function protection, and the secondary MOS tube chopping output greatly improves the efficiency of the whole machine; at the same time, the enhancement of the chip function greatly reduces the peripheral protection circuit and control circuit, reducing the Small module size, thus l...

AI Technical Summary

Problems solved by technology

[0002] At present, in China, most power amplifier chips have less functions, MOS tubes are too large in size and low in efficiency, resulting in a large appearance and volume; and the power amplifiers are too small in power and the number of channels is small, and the driving time is slow.

At the same time, the switching boost module is large in size and low in efficiency

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