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Semiconductor method to protect wafers from bevel contamination

A semiconductor, wafer technology used in the semiconductor field to protect wafers from bevel contamination

Active Publication Date: 2020-12-29
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, undesired humps are created by edge bead wash and backside wash, which is a potential source of defects in subsequent processes

Method used

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  • Semiconductor method to protect wafers from bevel contamination
  • Semiconductor method to protect wafers from bevel contamination
  • Semiconductor method to protect wafers from bevel contamination

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Embodiment Construction

[0019] It should be understood that the following disclosure provides many different embodiments or examples for implementing different features of various embodiments. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. In addition, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0020] Also, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe an element as shown. or the relationship of a component to another (or other) elements or components. Spatially relative terms are intended to encompass different orientations of the device in use or ope...

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Abstract

Embodiments of the present invention provide a method comprising: coating an edge portion of a wafer with a first chemical solution comprising a chemical mixture of an acid labile group, a solubility control unit, and a thermal acid generator; curing the first chemical solution to form a first protective layer on the edge portion of the wafer; coat a photoresist layer on the front side of the wafer; remove the first protective layer by a first removal solution; and perform an exposure process on the photoresist layer. Embodiments of the present invention relate to semiconductor methods for protecting wafers from bevel contamination.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor methods for protecting wafers from bevel contamination. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced successive generations of ICs, where each generation of ICs has smaller and more complex circuits than the previous generation of ICs. During IC evolution, functional density (ie, the number of interconnected devices per chip area) typically increases while geometry size (ie, the smallest component (or line) that can be created using a fabrication process) decreases. This scaling down process generally provides benefits by increasing production efficiency and reducing associated costs. This scaling process also increases the complexity of handling and manufacturing ICs and in order to achieve these advances, similar developments in IC processing and manufact...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027G03F7/00
CPCG03F7/0035H01L21/0274G03F7/38G03F7/40G03F7/162H01L21/6715G03F7/168G03F7/11G03F7/32H01L21/0273H01L21/02282G03F7/2028G03F7/0392
Inventor 訾安仁郑雅如张庆裕林进祥
Owner TAIWAN SEMICON MFG CO LTD