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A finfet on a substrate and its forming method

A substrate and polysilicon technology, applied in semiconductor devices, electrical components, circuits, etc.

Active Publication Date: 2021-06-01
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This scaling down has increased the complexity of the semiconductor manufacturing process

Method used

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  • A finfet on a substrate and its forming method
  • A finfet on a substrate and its forming method
  • A finfet on a substrate and its forming method

Examples

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Embodiment Construction

[0012] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include that an additional component may be formed between the first component and the second component. , so that the first component and the second component may not be in direct contact with each other. As used herein, forming a first part on a second part means that the first part is formed in direct contact with the second part. In addition, the present invention may repeat reference numerals and / or characters in various embodimen...

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Abstract

A method of forming a fin field effect transistor (finFET) on a substrate includes forming a fin structure on the substrate, forming an oxide layer on the fin structure, and forming a polysilicon structure on the oxide layer. The method also includes modifying the polysilicon structure such that a first horizontal dimension of the first portion of the modified polysilicon structure is smaller than a second horizontal dimension of a second portion of the modified polysilicon structure. The method also includes replacing the modified polysilicon structure with a gate structure, wherein a first horizontal dimension of a first portion of the gate structure is smaller than a second horizontal dimension of a second portion of the gate structure.

Description

technical field [0001] Embodiments of the present invention relate to a finFET and a method for forming the same. Background technique [0002] As semiconductor technology advances, there is an increasing need for higher storage capacity, faster processing systems, higher performance, and lower cost. To meet these demands, the semiconductor industry continues to scale down the size of semiconductor devices, such as metal oxide semiconductor field effect transistors (MOSFETs), including planar MOSFETs and fin field effect transistors (finFETs). This scaling down has increased the complexity of the semiconductor manufacturing process. Contents of the invention [0003] According to some embodiments of the present invention, there is provided a method of forming a fin field effect transistor (finFET) on a substrate, the method comprising: forming a fin structure on the substrate; forming a fin structure on the a protective layer, wherein the protective layer includes a top ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/266H01L29/06H01L21/336H01L29/78
CPCH01L21/266H01L29/0688H01L29/66795H01L29/785H01L29/7848H01L21/32135H01L21/32105H01L29/6675H01L21/32055H01L21/76829H01L21/3213H01L29/41791H01L29/66545H01L29/7851H01L29/456H01L21/02532H01L21/3065H01L21/02595H01L21/28114H01L29/42376
Inventor 江国诚王志豪蔡庆威程冠伦
Owner TAIWAN SEMICON MFG CO LTD