Method for producing an array substrate for a liquid crystal display device

Abstract

The present invention relates to method for producing an array substrate for a liquid crystal display device, wherein an etching solution composition is used which comprises, with respect to the entire weight of the composition, a) from 5 to 25 percent by weight of hydrogen peroxide (H2O2); b) from 0.1 to 5 percent by weight of sulphuric acid; c) from 0.01 to 1.0 percent by weight of a fluorine-containing compound; d) from 0.1 to 5 percent by weight of an azole compound; e) from 0.1 to 5 percent by weight of an imidazole compound; and f) a balance of water.

Description

technical field [0001] The invention relates to a method for manufacturing an array substrate for a liquid crystal display device. Background technique [0002] Forming metal wiring on a substrate of a semiconductor device includes forming a metal layer, coating a photoresist, exposing and developing to form a photoresist on a selective area, and performing etching. In addition, forming the metal wiring includes performing a cleaning process before and after each individual process. The etching process is performed such that a metal layer is formed on selective regions using the photoresist as a mask, and generally includes dry etching using plasma, or wet etching using an etchant composition. [0003] In such semiconductor devices, the resistance of metal wiring has recently been regarded as important. Because resistance is the main factor in inducing RC signal delay. In particular, in the case of a thin film transistor-liquid crystal display device (TFT-LCD), related te...

AI Technical Summary

Problems solved by technology

Traditionally, chromium (Cr, resistivity: 12.7×10 -8 Ωm), molybdenum (Mo, resistivity: 5×10 -8 Ωm), aluminum (Al, resistivity: 2.65×10 -8 Ωm), and their alloys, but it is actually difficult to use for large TFT-LCD gate lines and data lines

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