Method for producing an array substrate for a liquid crystal display device
A technology for liquid crystal display devices and array substrates, applied in chemical instruments and methods, optics, instruments, etc., can solve problems such as gate lines and data lines that are difficult to use in large TFT-LCDs, and achieve the effect of preventing electrical short-circuits and being environmentally friendly
Active Publication Date: 2013-04-03
DONGWOO FINE CHEM CO LTD
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Problems solved by technology
Traditionally, chromium (Cr, resistivity: 12.7×10 -8 Ωm), molybdenum (Mo, resistivity: 5×10 -8 Ωm), aluminum (Al, resistivity: 2.65×10 -8 Ωm), and their alloys, but it is actually difficult to use for large TFT-LCD gate lines and data lines
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Embodiment 1 to 6、 comparative example 1 and 2
[0038] Examples 1 to 6, Comparative Examples 1 and 2: Preparation of etchant composition for Cu-based metal layer
[0039] Etchant compositions of Examples 1 to 6 were prepared according to the ingredients shown in Table 1 below.
[0040] Table 1
[0041]
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Abstract
The present invention relates to method for producing an array substrate for a liquid crystal display device, wherein an etching solution composition is used which comprises, with respect to the entire weight of the composition, a) from 5 to 25 percent by weight of hydrogen peroxide (H2O2); b) from 0.1 to 5 percent by weight of sulphuric acid; c) from 0.01 to 1.0 percent by weight of a fluorine-containing compound; d) from 0.1 to 5 percent by weight of an azole compound; e) from 0.1 to 5 percent by weight of an imidazole compound; and f) a balance of water.
Description
technical field [0001] The invention relates to a method for manufacturing an array substrate for a liquid crystal display device. Background technique [0002] Forming metal wiring on a substrate of a semiconductor device includes forming a metal layer, coating a photoresist, exposing and developing to form a photoresist on a selective area, and performing etching. In addition, forming the metal wiring includes performing a cleaning process before and after each individual process. The etching process is performed such that a metal layer is formed on selective regions using the photoresist as a mask, and generally includes dry etching using plasma, or wet etching using an etchant composition. [0003] In such semiconductor devices, the resistance of metal wiring has recently been regarded as important. Because resistance is the main factor in inducing RC signal delay. In particular, in the case of a thin film transistor-liquid crystal display device (TFT-LCD), related te...
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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/136C09K13/08
CPCG02F1/1362C09K13/08
Inventor 李石崔容硕尹暎晋李友兰
Owner DONGWOO FINE CHEM CO LTD
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