Semiconductor structure and forming method thereof

Abstract

The invention discloses a semiconductor structure and a forming method thereof. After a stress layer is formed in fin parts on the two sides of a gate structure, a barrier layer is formed on a side wall of the gate structure, and then first ion implantation is performed on the fin parts below the stress layer to form a doping region. The depth of the ion implantation is relatively high, so that relatively high ion implantation energy is needed. The barrier layer blocks the ion implantation close to the two sides of the gate structure, so that the damage of relatively high ion implantation energy to the gate structure is avoided, and the performance of the formed semiconductor structure is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. Therefore, with the increase in the density and integration of semiconductor devices, the gate size of planar transistors is also getting smaller and smaller. The ability of traditional planar transistors to control channel currents has become Weak, short channel effect occurs, leakage current increases, and ultimately affects the electrical performance of semiconductor devices. [0003] In order to further reduce the size of MOSFET devices, people have developed multi-side gate field effect transistor structures to improve the controllabil...

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Problems solved by technology

[0004] However, the electrical performance of fin field effect transistors formed in the prior art needs to be further improved

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