Unlock instant, AI-driven research and patent intelligence for your innovation.

Memory cell, device, memory cell array and method of operation

A storage cell array and storage cell technology, applied in the field of memory, can solve the problem of small reset current of setting current and the like

Active Publication Date: 2020-12-04
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the inventors of the present application found that: the set current (set current) and the reset current (reset current) of the above-mentioned 2D1R array architecture are relatively small

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory cell, device, memory cell array and method of operation
  • Memory cell, device, memory cell array and method of operation
  • Memory cell, device, memory cell array and method of operation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be understood that the relative arrangements of components and steps, numerical expressions and values ​​set forth in these embodiments should not be construed as limiting the scope of the present application unless specifically stated otherwise.

[0034] In addition, it should be understood that, for the convenience of description, the dimensions of the various components shown in the drawings are not necessarily drawn according to the actual scale relationship, for example, the thickness or width of some layers may be exaggerated relative to other layers.

[0035] The following description of the exemplary embodiments is illustrative only and is not intended to limit the application, its application or uses in any way.

[0036] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be disc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This application disclosed a storage unit, device, storage unit array and its operation methods, involving the field of memory technology.The storage unit includes: the second secondary pipe, the bottom electrode, the top electrode, and the data storage material layer between the bottom electrode and the top electrode and the top electrode.The first two pole tube includes: the first trap area in the substrate; the first N -type doped area is adjacent to the first trap area and connected to the position line; and the first P type doped areaThe area is adjacent and is separated from the first N -type doped interval.The second and second poles include: the second trap area in the substrate, the same type of conductivity in the first trap area; the second N -type doped area, adjacent to the second trap area; and the second P type doped areaIt is adjacent to the second trap area and connected to the reset line, and is separated from the second N -type doped interval.The bottom electrode is connected to the first P type doped area and the second N -type doped area, respectively.The top electrode is connected to the word line.This application can increase the position and reset current.

Description

technical field [0001] The present application relates to the technical field of memory, and in particular to a storage unit, a device, a storage unit array and an operation method thereof. Background technique [0002] For resistive memory (RRAM) or phase change memory (PCRAM), the array architecture of 1T1R (one transistor and one resistive or phase change memory) is a common array architecture. Compared with the 1T1R array architecture, the 2D1R (2 diodes and 1 resistive change or phase change memory) array architecture can obtain higher operating current, lower leakage current and higher array density. [0003] In an existing 2D1R array architecture, the first diode of the two diodes includes a P+ doped region and an N well, that is, a PN junction is formed at the interface of the P+ doped region and the N well; The second diode includes an N+ doped region and a P well, that is, a PN junction is formed at the interface of the N+ doped region and the P well. In such a 2...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/24G11C13/00
CPCG11C13/0004G11C13/0026G11C13/0028H10B63/20H01L29/8613H01L29/0649G11C13/003G11C2213/72G11C2213/74G11C13/0097H10B63/80H10N70/24H10N70/231H10N70/826H10N70/8828H10N70/8833G11C2213/32H01L29/861G11C13/0069G11C13/004G11C13/0007G11C2013/005G11C2013/009G11C2213/52H10N70/841
Inventor 曹恒仇圣棻
Owner SEMICON MFG INT (SHANGHAI) CORP
PatSnap Eureka logo

PatSnap Eureka turns technology decisions into work you can execute. Powered by our Innovation Knowledge Graph, it runs expert workflows across engineering, life sciences, materials and intellectual property. Get your review-ready output in minutes.

X (Twitter)LinkedInYouTubeSubstack

© 2026 PatSnap. All rights reserved. 

Terms of Service

 | 

Privacy policy

 | 

Modern Slavery Act Transparency Statement