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LED flip chip and manufacturing method thereof

A technology of flip chip and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high manufacturing cost and cumbersome manufacturing process, and achieve the effects of simple manufacturing process, good light output effect, and cost reduction

Inactive Publication Date: 2019-03-05
ENRAYTEK OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The patent with the publication number CN 105489721 A discloses a LED flip-chip with a reflective layer, which provides a peripheral cladding refraction layer / reflective layer structure. On the basis of the normal flip-chip structure, the coating is added at the chip spacing position Non-refractive layer / reflective layer, so as to improve the light output ratio, because the patent adds a reflective / refractive layer behind the lead electrode, the production cost is high, and the manufacturing process is cumbersome

Method used

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  • LED flip chip and manufacturing method thereof
  • LED flip chip and manufacturing method thereof
  • LED flip chip and manufacturing method thereof

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Embodiment Construction

[0057] based on the following Figure 1 to Figure 10 , specifically explain the preferred embodiment of the present invention.

[0058] Such as figure 1 As shown, the present invention provides a LED flip chip manufacturing method, comprising the following steps:

[0059] Step S1, preparing an epitaxial layer;

[0060] Step S2, using laser scribing and chemical sidewall etching to form the sidewall structure of the ravine groove;

[0061] Step S3, forming an N-region trench structure by etching between adjacent trench groove sidewall structures, the N-region trench structure is used as the N-region, and the epitaxial layers on both sides of the N-region trench structure are used as the P-region;

[0062] Step S4, generating an ITO conductive layer on the epitaxial layer in the P region;

[0063] Step S5, generating a reflective layer (Ref) on the ITO conductive layer in the P region;

[0064] Step S6, forming a passivation layer on the reflective layer in the P region, an...

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Abstract

The invention discloses an LED flip chip and a manufacturing method thereof. An LED inverted structure with inverted trapezoidal side walls is prepared through laser scribing, chemical side wall corrosion and back cracking; a SiO2 protection layer on an upper layer of a passivation layer in a traditional process is replaced with a DBR reflection structure / refraction structure, and the reflection structure / the refraction structure covers the side walls of the chip, so that a better light emitting effect can be obtained; and the manufacturing process is simple, so that the cost is effectively reduced.

Description

technical field [0001] The invention relates to an LED flip chip and a manufacturing method thereof. Background technique [0002] The current LED chip adopts either a front-mounted chip structure or a flip-chip structure. Compared with the front-mounted chip, the flip-chip itself has the advantages of better light emitting effect and easier packaging. The patent with the publication number CN 102569544 A discloses a method for making independent light-emitting diodes. The chips are separated by laser scribing and chemical methods, which simply reduce light loss and do not help side reflections. The patent with the publication number of CN 103311392 A discloses a stealth cut LED chip and its manufacturing method. After forming a groove by ICP or laser + chemical method, the lobes are separated by hidden cutting to form a certain angle of inclination, so that The side wall is bright and the light output rate is increased. This patent only adopts multiple processes for separa...

Claims

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Application Information

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IPC IPC(8): H01L33/46H01L33/32
CPCH01L33/46H01L33/0075H01L33/32
Inventor 马后永
Owner ENRAYTEK OPTOELECTRONICS
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