Graphene crystalline silicon solar cell and manufacturing method thereof

Abstract

The invention provides a graphene crystalline silicon solar cell. The graphene crystalline silicon solar cell comprises a silicon wafer and a positive grid line; the positive grid line is arranged onthe surface of the silicon wafer; the positive grid line comprises multiple mutually parallel main grids and auxiliary grids vertical to the main grids; the graphene crystalline silicon solar cell further comprises a graphene transparent conductive layer; and the graphene transparent conductive layer at least covers the surface of the auxiliary grids. Compared with the prior art, the graphene transparent conductive layer is superposed on the crystalline silicon solar cell; graphene has the advantages of being high in transmittance and good in electrical conductivity; the graphene, the main grids and the auxiliary grids are in good electrical contact; therefore, the good transverse conduction of the graphene is sufficiently utilized; partial carriers are transmitted to the main grids through the graphene; the carrier transmission loss of the auxiliary grids is reduced; simultaneously, compared with the traditional solar cell, the arrangement number of the auxiliary grids can be reduced;a light area is increased; and the battery short-circuiting current and the photoelectric conversion efficiency are increased.

Description

technical field [0001] The invention relates to the field of solar photovoltaic technology, in particular to a graphene crystalline silicon solar cell and a manufacturing method thereof. Background technique [0002] In crystalline silicon solar cells, the front electrode is responsible for collecting carriers from crystalline silicon and transferring them to external circuits. The front electrode structure is divided into a main grid and a sub grid, both of which undertake different functions. Among them, the auxiliary gate is responsible for collecting carriers from the crystalline silicon, and then transferring them to the main gate, and then the main gate transfers the carriers to the solder strips and enters the external circuit. In order to control the shading area and cost, the sub-gates are generally thinner, and the thinner sub-gates have higher resistance, and power loss will occur during the transmission of carriers through the sub-gates to the main grid. At pre...

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Problems solved by technology

However, increasing the number of busbars will increase the shading area. In order not to increase the shading area, it is necessary to reduce the width of the busbar, and the reduction in width will increase the difficulty of welding ribbons on the busbar, affecting product yield and reliability.

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