A method to improve the electrical performance of algan/gan HEMT devices

An electrical performance and device technology, which is applied in the field of improving the electrical performance of AlGaN/GaN HEMT devices, can solve the reliability problems, the influence of device performance and yield, hindering device application, defect density, restricting device electrical performance and other problems, so as to reduce gate leakage effect of current, increasing charge density, improving electrical properties
CN109473343BActive Publication Date: 2020-09-08西安电子科技大学重庆集成电路创新研究院
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
西安电子科技大学重庆集成电路创新研究院
Publication Date
2020-09-08

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Abstract

The invention relates to a method for improving the electrical properties of an AlGaN / GaN HEMT (High-Electron-Mobility Transistor) device. The method comprises the step of carrying out proton irradiation on the AlGaN / GaN HEMT device under the condition of a preset irradiation temperature, proton fluence and proton energy. By use of the embodiment of the invention, the protons of certain fluence and energy can be adopted to carry out irradiation on the AlGaN / GaN HEMT device, incoming protons can make up inherent defects in the device so as to reduce defect density, the capture of defects on a current carrier is lowered, electric density is increased, grid leakage current is reduced, the maximum saturation current and transconductance of the device can be improved, and therefore, the electric performance of the device is improved.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for improving the electrical performance of an AlGaN / GaN HEMT device. Background technique

[0002] Group III nitride materials are ideal materials for manufacturing high-voltage, high-temperature, and high-frequency electronic devices. Research on group III nitride materials has become the focus of widespread attention at home and abroad, and devices prepared from them are also widely used in national defense and aerospace, high-frequency broadband Communication, satellite remote sensing, radar and other military and civilian fields have broad application prospects.

[0003] The heterojunction of AlGaN / GaN HEMT devices has a large conduction band shift, and the heterointerface has a strong polarization effect, which can induce a large amount of interface charges and gather to form a high-density two-dimensional electron gas, making AlGaN / GaN HEMT de...

Claims

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