A method to improve the electrical performance of algan/gan HEMT devices

An electrical performance and device technology, which is applied in the field of improving the electrical performance of AlGaN/GaN HEMT devices, can solve the reliability problems, the influence of device performance and yield, hindering device application, defect density, restricting device electrical performance and other problems, so as to reduce gate leakage effect of current, increasing charge density, improving electrical properties

An electrical performance and device technology, which is applied in the field of improving the electrical performance of AlGaN/GaN HEMT devices, can solve the reliability problems, the influence of device performance and yield, hindering device application, defect density, restricting device electrical performance and other problems, so as to reduce gate leakage effect of current, increasing charge density, improving electrical properties

CN109473343BActive Publication Date: 2020-09-08西安电子科技大学重庆集成电路创新研究院
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  • A method to improve the electrical performance of algan/gan HEMT devices
  • A method to improve the electrical performance of algan/gan HEMT devices
  • A method to improve the electrical performance of algan/gan HEMT devices

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Embodiment 1

[0024] An embodiment of the present invention provides a method for improving the electrical performance of an AlGaN / GaN HEMT device. The method is: irradiating the AlGaN / GaN HEMT device under preset conditions of temperature, proton fluence and proton energy .

[0025] The AlGaN / GaN HEMT device used in the embodiment of the present invention has a general device structure, but is not limited to the general device structure, and may be an improved structure of the general device structure, or may be another form of AlGaN / GaN HEMT device structure.

[0026] First, the electrical performance of the AlGaN / GaN HEMT device before proton irradiation was tested.

[0027] Further, under the preset irradiation temperature, proton fluence and proton energy conditions, the AlGaN / GaN HEMT device is irradiated with protons, and no bias voltage is applied to the AlGaN / GaN HEMT device during the irradiation process.

[0028] Specifically, the proton fluence of proton irradiation is 1×10 11...

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Abstract

The invention relates to a method for improving the electrical properties of an AlGaN / GaN HEMT (High-Electron-Mobility Transistor) device. The method comprises the step of carrying out proton irradiation on the AlGaN / GaN HEMT device under the condition of a preset irradiation temperature, proton fluence and proton energy. By use of the embodiment of the invention, the protons of certain fluence and energy can be adopted to carry out irradiation on the AlGaN / GaN HEMT device, incoming protons can make up inherent defects in the device so as to reduce defect density, the capture of defects on a current carrier is lowered, electric density is increased, grid leakage current is reduced, the maximum saturation current and transconductance of the device can be improved, and therefore, the electric performance of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for improving the electrical performance of an AlGaN / GaN HEMT device. Background technique [0002] Group III nitride materials are ideal materials for manufacturing high-voltage, high-temperature, and high-frequency electronic devices. Research on group III nitride materials has become the focus of widespread attention at home and abroad, and devices prepared from them are also widely used in national defense and aerospace, high-frequency broadband Communication, satellite remote sensing, radar and other military and civilian fields have broad application prospects. [0003] The heterojunction of AlGaN / GaN HEMT devices has a large conduction band shift, and the heterointerface has a strong polarization effect, which can induce a large amount of interface charges and gather to form a high-density two-dimensional electron gas, making AlGaN / GaN HEMT de...

Claims

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Application Information

Patent Timeline
08 Sep 2020
Publication
CN109473343B
IPC
H01L21/263; H01L21/335
CPC
H01L21/263; H01L29/66462
Inventors
吕玲; 严肖瑶