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Semiconductor device and method of forming the same

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as poor performance of semiconductor devices, and achieve the effects of improving performance and reducing bending

Active Publication Date: 2020-05-26
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, for 3D flash memory semiconductor devices formed by stacking multi-layer films, in the manufacturing process, such as: film deposition, etching, ion implantation, high temperature annealing and other steps, due to the stress of the film itself, with the increase of the number of film layers and film thickness , the stress of the film continues to become stronger, resulting in warpage of the semiconductor device, making the performance of the semiconductor device poor

Method used

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  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same
  • Semiconductor device and method of forming the same

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Embodiment Construction

[0022] As mentioned in the background, existing semiconductor devices have poor performance.

[0023] figure 1 It is a schematic diagram of the structure of a 3D memory.

[0024] Please refer to figure 1 , the 3D memory includes: a substrate 100, the substrate 100 includes an opposite first surface 1 and a second surface 2; a laminated layer 101 and a storage structure 102 located on the surface of the first surface 1, and the storage structure 102 runs through the laminated layer 101.

[0025] In the above 3D memory, the stacked layer 101 includes alternately stacked insulating layers 101a and sacrificial gates 101b. The insulating layer 101a and the sacrificial gate 101b produce stress on the first surface 1 of the substrate 100, but the insulating layer 101a and the sacrificial gate 101b do not produce stress on the second surface 2 of the substrate 100, so the substrate 100 is prone to warping, which is not conducive to Improve the performance of semiconductor devices....

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Abstract

A semiconductor device and its forming method, wherein, the forming method includes: forming a first device, and the forming method of the first device includes: providing a first substrate; forming a first stacked layer and a first layer on the surface of the first substrate A storage structure, the first storage structure runs through the first stacked layer; forming a second device, the forming method of the second device includes: providing a second substrate; forming the second stacked layer and the first stacked layer on the surface of the second substrate Two storage structures, the second storage structure runs through the second stacked layer; the first device is bonded to the second device, and the surface of the second stacked layer corresponds to the surface of the first stacked layer. The bending of the semiconductor device can be reduced by using the method, and the performance of the semiconductor device can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] Flash memory (Flash Memory) is also called flash memory. The main feature of flash memory is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. Therefore, it has become the mainstream memory of non-volatile memory. According to different structures, flash memory is divided into NOR Flash Memory and NAND Flash Memory. Compared with NAND flash memory, NAND flash memory can provide higher cell density, higher storage density, and faster writing and erasing speed. [0003] With the development of planar flash memory, the production process of semiconductors has made great progress. However, the current development of planar flash memory has encountered various challenges: phys...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11551H01L27/11578H10B41/20H10B43/20
CPCH10B41/20H10B43/20
Inventor 陈俊朱继锋华子群
Owner YANGTZE MEMORY TECH CO LTD