Check patentability & draft patents in minutes with Patsnap Eureka AI!

A kind of acoustic wave device and its manufacturing method

An acoustic wave device and device technology, applied in the field of acoustic wave device and its production, can solve problems such as influence, and achieve the effect of avoiding influence and improving performance

Active Publication Date: 2020-12-08
WUHAN YANXI MICRO COMPONENTS CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the above technical problems, the embodiments of the present invention expect to provide an acoustic wave device and its manufacturing method, which solves the problem that the manufacturing process existing in the manufacturing process of the acoustic wave device will affect the "air bridge" structure formed in the acoustic wave device. Avoiding the impact on the resonance region of the acoustic wave device, thereby improving the performance of the acoustic wave device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of acoustic wave device and its manufacturing method
  • A kind of acoustic wave device and its manufacturing method
  • A kind of acoustic wave device and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0064] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.

[0065] An embodiment of the present invention provides an acoustic wave device, which includes: a base substrate 1, and a first electrode layer 2, a piezoelectric layer 3, and a second electrode layer 4 sequentially arranged on the base substrate 1, the acoustic wave The device also includes a protective layer 5, where:

[0066] The protective layer 5 is disposed at a first position on the surface of the second electrode layer 4 away from the base substrate 1 .

[0067] Wherein, the first position is the position corresponding to the first overlapping area on the second electrode layer, and the first overlapping area is the active part of the acoustic wave device in the overlapping area among the first electrode layer, the second electrode layer and the piezoelectric layer. T...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the present invention discloses an acoustic wave device, the device includes: a base substrate, and a first electrode layer, a piezoelectric layer and a second electrode layer sequentially arranged on the base substrate, and the device also includes a protective layer , wherein: the protective layer is disposed at a first position on the surface of the second electrode layer away from the base substrate; the first position corresponds to the first overlapping area on the second electrode layer The first overlapping region is the region where the active region of the acoustic wave device is located in the overlapping region among the first electrode layer, the second electrode layer and the piezoelectric layer. The embodiment of the invention also discloses a manufacturing method of the acoustic wave device.

Description

technical field [0001] The invention relates to an acoustic wave device in the semiconductor field, in particular to an acoustic wave device and a manufacturing method thereof. Background technique [0002] In recent years, communication devices such as mobile phones are widely used, and then there are cases where acoustic wave devices using sound waves are used as filters for communication devices and duplexers and the like. As examples of acoustic wave devices, there are devices using surface acoustic waves (Surface Acoustic Wave, SAW), devices using bulk acoustic waves (Bulk Acoustic Wave, BAW), and the like. The piezoelectric thin film resonator is a device using BAW, and includes a film bulk acoustic resonator (Film Bulk Acoustic Resonator, FBAR) and a solid mounted resonator (Solidly Mounted Resonator, SMR) and the like. Thin film bulk acoustic wave resonator is the core component of bulk acoustic wave filter, and its performance determines the performance of bulk aco...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/15H03H3/02
CPCH03H3/02H03H9/15H03H2003/021H03H3/04H03H2003/0414H03H9/105H03H9/1042H03H9/173H03H9/1014H03H9/171H03H9/54H03H9/131
Inventor 林瑞钦廖珮淳
Owner WUHAN YANXI MICRO COMPONENTS CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com