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A kind of acoustic wave device and its manufacturing method

An acoustic wave device and device technology, applied in the field of acoustic wave device and its production, can solve problems such as influence, and achieve the effect of avoiding influence and improving performance

Active Publication Date: 2020-12-08
WUHAN YANXI MICRO COMPONENTS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the above technical problems, the embodiments of the present invention expect to provide an acoustic wave device and its manufacturing method, which solves the problem that the manufacturing process existing in the manufacturing process of the acoustic wave device will affect the "air bridge" structure formed in the acoustic wave device. Avoiding the impact on the resonance region of the acoustic wave device, thereby improving the performance of the acoustic wave device

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  • A kind of acoustic wave device and its manufacturing method
  • A kind of acoustic wave device and its manufacturing method
  • A kind of acoustic wave device and its manufacturing method

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Embodiment Construction

[0064] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.

[0065] An embodiment of the present invention provides an acoustic wave device, which includes: a base substrate 1, and a first electrode layer 2, a piezoelectric layer 3, and a second electrode layer 4 sequentially arranged on the base substrate 1, the acoustic wave The device also includes a protective layer 5, where:

[0066] The protective layer 5 is disposed at a first position on the surface of the second electrode layer 4 away from the base substrate 1 .

[0067] Wherein, the first position is the position corresponding to the first overlapping area on the second electrode layer, and the first overlapping area is the active part of the acoustic wave device in the overlapping area among the first electrode layer, the second electrode layer and the piezoelectric layer. T...

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Abstract

The embodiment of the present invention discloses an acoustic wave device, the device includes: a base substrate, and a first electrode layer, a piezoelectric layer and a second electrode layer sequentially arranged on the base substrate, and the device also includes a protective layer , wherein: the protective layer is disposed at a first position on the surface of the second electrode layer away from the base substrate; the first position corresponds to the first overlapping area on the second electrode layer The first overlapping region is the region where the active region of the acoustic wave device is located in the overlapping region among the first electrode layer, the second electrode layer and the piezoelectric layer. The embodiment of the invention also discloses a manufacturing method of the acoustic wave device.

Description

technical field [0001] The invention relates to an acoustic wave device in the semiconductor field, in particular to an acoustic wave device and a manufacturing method thereof. Background technique [0002] In recent years, communication devices such as mobile phones are widely used, and then there are cases where acoustic wave devices using sound waves are used as filters for communication devices and duplexers and the like. As examples of acoustic wave devices, there are devices using surface acoustic waves (Surface Acoustic Wave, SAW), devices using bulk acoustic waves (Bulk Acoustic Wave, BAW), and the like. The piezoelectric thin film resonator is a device using BAW, and includes a film bulk acoustic resonator (Film Bulk Acoustic Resonator, FBAR) and a solid mounted resonator (Solidly Mounted Resonator, SMR) and the like. Thin film bulk acoustic wave resonator is the core component of bulk acoustic wave filter, and its performance determines the performance of bulk aco...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/15H03H3/02
CPCH03H3/02H03H9/15H03H2003/021H03H3/04H03H2003/0414H03H9/105H03H9/1042H03H9/173H03H9/1014H03H9/171H03H9/54H03H9/131
Inventor 林瑞钦廖珮淳
Owner WUHAN YANXI MICRO COMPONENTS CO LTD
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