Thick-film paste with multiple discrete frits and methods for contacting crystalline silicon solar cell emitter surfaces
A thick film paste, frit technology, applied in conductive materials, circuits, photovoltaic power generation and other directions dispersed in non-conductive inorganic materials, can solve the problems of limiting the theoretical performance and limitations of solar cells
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
example
[0124] The following examples illustrate but do not limit the invention disclosed herein.
[0125] Screen Printing Paste Preparation
[0126] The screen printing pastes of Examples 1-7 were prepared by mixing silver powder (90wt%), frit (2wt%) and organic components (8wt%) in an industrial planetary mixer, followed by roll milling and viscosity adjustment. Planetary mixing consists of slurry components mixed to uniformity with a viscosity of 300 to 600 Pa-s. The slurry was then roll milled in a 3-roll mill to an average fineness of ground (FOG) of about 5 μm according to ASTM standard test method D1210-05. After 24 hours, adjust the slurry to a final viscosity of 200-450 Pa-s.
[0127] d) Preparation of solar cells
[0128] The screen printing paste solar cell performance of embodiment 1-7 is in the POCl of commercially available industrial processing 3 The evaluation was performed on diffused n+-p-p+ Si wafers with the front surface phosphorus emitter diffusion profile co...
example 1
[0130] Frit 1: x=0.05 and Frit 2: x=0.95
[0131] Three exemplary conductive thick film pastes (pastes 1-3) were prepared using multiple discrete frit systems comprising frit 1 and frit 2. Frit 1 and Frit 2 have according to tellurium-lead-metal-oxygen composition. Frit 1 has x=0.05, where x is the fractional amount of tellurium cations (Te) based on the total amount of tellurium and lead cations (Pb), and z=0.315, where z is based on the total amount of tellurium, lead, and metal cations The fractional amount of the metal cation (M). Frit 2 has x=0.95 and z=0.315. Frit 1 and Frit 2 contain metal cations (M) selected from Al, Bi, B, Ca, Li, Mg, Na, Si, Ti, W and Zn. Table 1 shows the composition of frit 1 and frit 2. Pastes 1-3 contained frit 1 and frit 2 in the mixing ratio shown in Table 5.1. Slurry 1 contained frit 1 and frit 2 in a 45:55 ratio. Slurries 2 and 3 are comparative examples containing only a single discrete frit.
[0132] Table 6 shows the solar cell e...
example 2
[0134] Frit 3: x=0.10 and Frit 4: x=0.90
[0135] Three exemplary conductive thick film pastes (pastes 4-6) were prepared using multiple discrete frit systems comprising frit 3 and frit 4. Frit 3 and frit 4 have according to tellurium-lead-metal-oxygen composition. Frit 3 has x=0.10, where x is the fractional amount of tellurium cations (Te) based on the total amount of tellurium and lead cations (Pb), and z=0.315, where z is based on the total amount of tellurium, lead, and metal cations The fractional amount of the metal cation (M). Frit 3 has x=0.90 and z=0.315. Frit 3 and frit 4 contain metal cations (M) selected from Al, Bi, B, Ca, Li, Mg, Na, Si, Ti, W and Zn. Table 2 shows the composition of frit 3 and frit 4. Pastes 4-6 contained frit 3 and frit 4 in the mixing ratio shown in Table 5.1. Slurry 4 contained frit 3 and frit 4 in a 43:57 ratio. Slurries 5 and 6 are comparative examples containing only a single discrete frit.
[0136] Table 6 shows the solar cell e...
PUM
| Property | Measurement | Unit |
|---|---|---|
| width | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 


