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Thick-film paste with multiple discrete frits and methods for contacting crystalline silicon solar cell emitter surfaces

A thick film paste, frit technology, applied in conductive materials, circuits, photovoltaic power generation and other directions dispersed in non-conductive inorganic materials, can solve the problems of limiting the theoretical performance and limitations of solar cells

Active Publication Date: 2019-03-26
JIANGXI JIAYIN SCI & TECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This limits the control of subsequent ARC dissolution reactions during firing
This in turn further limits the quality of the electrical contact created between the semiconductor and metal conductor and the theoretical performance of the solar cell

Method used

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  • Thick-film paste with multiple discrete frits and methods for contacting crystalline silicon solar cell emitter surfaces
  • Thick-film paste with multiple discrete frits and methods for contacting crystalline silicon solar cell emitter surfaces
  • Thick-film paste with multiple discrete frits and methods for contacting crystalline silicon solar cell emitter surfaces

Examples

Experimental program
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Effect test

example

[0124] The following examples illustrate but do not limit the invention disclosed herein.

[0125] Screen Printing Paste Preparation

[0126] The screen printing pastes of Examples 1-7 were prepared by mixing silver powder (90wt%), frit (2wt%) and organic components (8wt%) in an industrial planetary mixer, followed by roll milling and viscosity adjustment. Planetary mixing consists of slurry components mixed to uniformity with a viscosity of 300 to 600 Pa-s. The slurry was then roll milled in a 3-roll mill to an average fineness of ground (FOG) of about 5 μm according to ASTM standard test method D1210-05. After 24 hours, adjust the slurry to a final viscosity of 200-450 Pa-s.

[0127] d) Preparation of solar cells

[0128] The screen printing paste solar cell performance of embodiment 1-7 is in the POCl of commercially available industrial processing 3 The evaluation was performed on diffused n+-p-p+ Si wafers with the front surface phosphorus emitter diffusion profile co...

example 1

[0130] Frit 1: x=0.05 and Frit 2: x=0.95

[0131] Three exemplary conductive thick film pastes (pastes 1-3) were prepared using multiple discrete frit systems comprising frit 1 and frit 2. Frit 1 and Frit 2 have according to tellurium-lead-metal-oxygen composition. Frit 1 has x=0.05, where x is the fractional amount of tellurium cations (Te) based on the total amount of tellurium and lead cations (Pb), and z=0.315, where z is based on the total amount of tellurium, lead, and metal cations The fractional amount of the metal cation (M). Frit 2 has x=0.95 and z=0.315. Frit 1 and Frit 2 contain metal cations (M) selected from Al, Bi, B, Ca, Li, Mg, Na, Si, Ti, W and Zn. Table 1 shows the composition of frit 1 and frit 2. Pastes 1-3 contained frit 1 and frit 2 in the mixing ratio shown in Table 5.1. Slurry 1 contained frit 1 and frit 2 in a 45:55 ratio. Slurries 2 and 3 are comparative examples containing only a single discrete frit.

[0132] Table 6 shows the solar cell e...

example 2

[0134] Frit 3: x=0.10 and Frit 4: x=0.90

[0135] Three exemplary conductive thick film pastes (pastes 4-6) were prepared using multiple discrete frit systems comprising frit 3 and frit 4. Frit 3 and frit 4 have according to tellurium-lead-metal-oxygen composition. Frit 3 has x=0.10, where x is the fractional amount of tellurium cations (Te) based on the total amount of tellurium and lead cations (Pb), and z=0.315, where z is based on the total amount of tellurium, lead, and metal cations The fractional amount of the metal cation (M). Frit 3 has x=0.90 and z=0.315. Frit 3 and frit 4 contain metal cations (M) selected from Al, Bi, B, Ca, Li, Mg, Na, Si, Ti, W and Zn. Table 2 shows the composition of frit 3 and frit 4. Pastes 4-6 contained frit 3 and frit 4 in the mixing ratio shown in Table 5.1. Slurry 4 contained frit 3 and frit 4 in a 43:57 ratio. Slurries 5 and 6 are comparative examples containing only a single discrete frit.

[0136] Table 6 shows the solar cell e...

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Abstract

Devices, methods, and systems are described for thick-film paste with multiple discrete frits. The paste may be applied to contacting crystalline silicon solar cell emitter surfaces. Each frit contains both lead and tellurium. The described multiple discrete frit paste has superior solar cell performance compared with single frit pastes made from the individual discrete frits that make-up the multiple frit paste.

Description

technical field [0001] The present invention relates generally to the fabrication of solar cells and, more importantly, to a screen printing conductive thick film paste for printing electrodes on the emitter surface of crystalline silicon solar cells. Background technique [0002] Photovoltaic (PV) solar cells are generally semiconductor devices that convert solar energy into electrical energy, and have been recognized as an infinite, clean, renewable next-generation energy source. PV solar cells generate a direct current, which flows through electrodes or conductive metallization to an external circuit load. Silver thick film based conductor metallization of crystalline silicon PV solar cells, front contact screen printing technique is more common in crystalline silicon solar cell industry due to its low cost, high yield and relatively high performance. [0003] Current industrial-scale screen-printed, phosphorus-doped N-type emitter, front junction P-type polysilicon sola...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18H01B1/16
CPCH01L31/022425H01B1/22H01L31/068H01L31/1804C03C3/062C03C3/122C03C8/02C03C8/10C03C8/22C03C8/18H01B1/16Y02E10/547C03C8/14C09D5/24H01L31/0272H01L31/05
Inventor 库尔特.米凯斯卡卢美军陈飞彪
Owner JIANGXI JIAYIN SCI & TECH LTD