Method for monitoring wafer testing probe card wearing degree

Abstract

The invention discloses a method for monitoring a wafer testing probe card wearing degree. The method comprises the steps of reading by a probe management system, performing data analysis on a wafer testing data packet which is transmitted from a probe bench, and obtaining a total number of probes of the probe card; calculating the needle number which can be tested by each wearing value of the probe head by the probe management system according to the actual probe head dimension of the probe card and the total number of the probes of the probe card; comparing the needle number which can be tested by each wearing value with a preset wearing degree extreme value by the probe management system, performing feedback of a comparing result to the probe bench, and performing corresponding operation for wafer testing by the probe bench. The method of the invention has advantages of improving probe card testing efficiency, reducing wafer testing cost, preventing unnecessary yield loss of the wafer, effectively improving wafer yield and effectively monitoring the probe card.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit testing, in particular to a method for monitoring the wear degree of a wafer testing probe card. Background technique [0002] During the testing process of wafer mass production, the probe will scratch the pad every time the needle is inserted. Under the action of friction and electromagnetic field, some non-conductive materials (such as debris, residue, etc.) will be on the needle tip. Accumulation, resulting in contamination of the needle tip, increased contact resistance, and further caused the failure rate of some test items sensitive to voltage / current values ​​to be higher than expected, and the number of mistests increased. [0003] If no measures are taken to increase the contact resistance, it will lead to an increase in false detection. The current general method is to perform regular needle cleans during mass production to ensure the yield. The usual practice of testin...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the defects in the prior art that the wear degree of the probe card is unreasonably set, the wear degree of the needle tip of the probe card cannot be controlled, excessive needle application causes waste of test time and the wear of the probe card is too fast, etc., and provides a A method for monitoring the wear degree of a wafer test probe card for real-time monitoring of the probe card

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