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A temperature control system and method for silicon carbide crystal resistance annealing

A temperature control system, silicon carbide technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve problems such as no annealing equipment

Active Publication Date: 2021-04-20
北京粤海金半导体技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a temperature control system and method for silicon carbide crystal resistance annealing, to solve the technical problem that there is no specially designed controllable annealing equipment in the existing technology

Method used

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  • A temperature control system and method for silicon carbide crystal resistance annealing
  • A temperature control system and method for silicon carbide crystal resistance annealing

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Experimental program
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Embodiment 1

[0017] by figure 1 Shown as an example, specifically implemented in the following manner: a temperature control system for silicon carbide crystal resistance annealing, comprising a growth furnace body 1, a heat preservation cover 2, a crucible 3, and a heating device 4, characterized in that: the resistance annealing The temperature control system also includes a flow controller 5, a water inlet 6, a flow control device 7, a thermometer 8, an air outlet pipe 9, a barometer 10, a heat transfer rod 11, a base 12, a crucible holder 13, a seed crystal tank 14, and a vacuum system 15. Water outlet 16, shelf-type temperature measuring thermocouple group 17 and air intake pipe 18, heat transfer rod 11 passes through the inside of the growth furnace body 1 transversely, and the left end of heat transfer rod 11 is provided with water outlet 16, the The water outlet 16 is arranged on the outside of the growth furnace body 1, the right end of the heat transfer rod 11 is provided with a ...

Embodiment 2

[0022] A temperature control method for silicon carbide crystal resistance method annealing, which utilizes a temperature control system for silicon carbide crystal resistance method annealing as described above to implement, it is characterized in that it includes the following steps: 1) annealing temperature step setting step : Set the annealing temperature step, set the initial temperature to 1900°C, and set N-level cooling intervals, each level of annealing temperature step is 50°C, and the final cooling temperature of the Nth level is TPn (n=1,2,3...) , and set the time required for each level of cooling, set the time required for cooling down from 1900 ° C to the Nth level as Tn minutes (n = 1, 2, 3...), the final temperature of annealing is 50 ° C, a total of 37 annealing temperature steps, the above settings are input in the control platform and stored in the control PC, and can be called at any time when controlling the annealing temperature steps; 2) steps for determi...

Embodiment 3

[0024] A temperature control method for silicon carbide crystal resistance method annealing, which utilizes a temperature control system for silicon carbide crystal resistance method annealing as described above to implement, it is characterized in that it includes the following steps: 1) annealing temperature step setting step : Set the annealing temperature step, set the initial temperature to 1900°C, and set N-level cooling intervals, each level of annealing temperature step is 60°C, and the final cooling temperature of the Nth level is TPn (n=1,2,3...) , and set the time required for each level of cooling, set the time required for cooling down from 1900 ° C to the Nth level as Tn minutes (n = 1, 2, 3...), the final temperature of annealing is 40 ° C, a total of 31 annealing temperature steps, the above settings are input in the control platform and stored in the control PC, and can be called at any time when controlling the annealing temperature steps; 2) steps for determi...

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Abstract

A temperature control system for silicon carbide crystal resistance annealing, comprising a growth furnace body, a heat transfer rod passing through the inside of the growth furnace body, a water outlet is arranged outside the growth furnace body, and a water inlet is arranged at the right end of the heat transfer rod A flow controller is installed on the left side of the water inlet. The middle part of the heat transfer rod passes through the base and is in close contact with the inner hole of the base. A heat preservation cover is installed between the growth furnace body and the crucible, and a vacuum system is installed on the left side below the growth furnace body, and an air inlet pipe and an air outlet pipe are respectively installed on the upper left side and the lower right side of the growth furnace body. A control PC is also included, and the control PC includes control platform software, a control module and a signal transmission module.

Description

technical field [0001] The invention relates to the technical field of silicon carbide crystal annealing, in particular to a temperature control system and method for silicon carbide crystal resistance annealing. Background technique [0002] As an important technical crystal, silicon carbide crystal has been widely used in many fields of science and technology, national defense and civil industry, and electronic technology. Such as infrared window materials, substrate substrates in the field of microelectronics, laser substrates, optical components and other uses. In order to eliminate inclusions and color centers in flaky silicon carbide crystals, it is necessary to anneal the grown crystal samples under different atmospheres. At present, there are a variety of techniques for growing silicon carbide crystals that can be implemented, but these methods are basically carried out at high temperatures. During the process of annealing silicon carbide crystals to room temperatur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/02C30B29/36
CPCC30B29/36C30B33/02
Inventor 张岩付吉国董伟赵然周卫东曾蕾
Owner 北京粤海金半导体技术有限公司
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