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Method for manufacturing semiconductor apparatus

A semiconductor and conductor technology, applied in the field of reducing contact plug recesses, can solve problems such as corrosion of metal contact plugs

Inactive Publication Date: 2019-04-05
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] May corrode metal contact plugs during planarization and fine grinding steps

Method used

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  • Method for manufacturing semiconductor apparatus
  • Method for manufacturing semiconductor apparatus
  • Method for manufacturing semiconductor apparatus

Examples

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Embodiment Construction

[0053] The different embodiments provided below can implement different configurations of the present invention. The examples of specific components and arrangements are used to simplify and not limit the embodiments of the invention. For example, the statement that the first component is formed on the second component includes that the two are in direct contact, or there are other additional components interposed between the two instead of direct contact. In addition, numbers may be repeated in various examples of the present invention, but these repetitions are only for simplification and clarity of description, and do not mean that units with the same numbers in different embodiments and / or arrangements have the same corresponding relationship.

[0054] In addition, spatial relative terms such as "below," "beneath," "below," "above," "above," or similar terms may be used to simplify describing an element relative to another element in a drawing. Relationship. Spatially rel...

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Abstract

A method of manufacturing a semiconductor apparatus includes exposing at least one of a source / drain contact plug or a gate contact plug to a metal ion source solution during a manufacturing process,wherein a constituent metal of a metal ion in the metal ion source solution and the at least one source / drain contact plug or gate contact plug is the same. If the source / drain contact plug or the gate contact plug is formed of cobalt, the metal ion source solution includes a cobalt ion source solution. If the source / drain contact plug or the gate contact plug is formed of tungsten, the metal ionsource solution includes a tungsten ion source solution.

Description

technical field [0001] Embodiments of the present invention relate to a method for forming a semiconductor device, and more particularly, to a method for reducing contact plug dishing. Background technique [0002] Metal oxide semiconductor devices are the basic units in integrated circuits. Existing MOS devices typically have gates and source / drains that can be contacted by metal contact plugs extending through the dielectric layer. [0003] Metal contact plugs are fabricated by depositing a metal-containing material into the opening in the dielectric layer, and typically planarizing the metal-containing material using chemical mechanical polishing and other subsequent fine grinding steps. [0004] During the planarization and fine grinding steps, the metal contact plugs may be corroded. Contents of the invention [0005] A method for forming a semiconductor device according to an embodiment of the present invention includes: forming a transistor, including: forming a g...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/28
CPCH01L21/28H01L21/28026H01L29/66477H01L29/78H01L21/02074H01L21/3212H01L21/823475H01L29/41766H01L29/0847H01L29/456H01L29/4958H01L29/66795H01L29/785H01L21/7684H01L21/76897H01L29/7851H01L21/823814H01L2029/7858H01L21/823871H01L21/76843H01L23/485H01L21/823821C09G1/02
Inventor 聂菱甫徐俊伟朱品磊刘启人林易生陈亮光
Owner TAIWAN SEMICON MFG CO LTD