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Lithography for image sensors

An image sensor and lithography technology, applied in the semiconductor field, which can solve the problem that the pixel size affects the performance of CIS

Inactive Publication Date: 2019-04-05
HUAIAN IMAGING DEVICE MFGR CORP
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Problems solved by technology

The reduction of pixel size will not only affect the performance of CIS, but also bring great challenges to the process

Method used

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  • Lithography for image sensors
  • Lithography for image sensors
  • Lithography for image sensors

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Embodiment Construction

[0021] In the CMOS image sensor, the photodiode isolation structure functions as an isolation layer between adjacent photodiode (PD) regions by implanting ions therein. Generally, a photodiode isolation structure of a CMOS image sensor is formed by a one-time exposure using a mask for ion implantation. After exposure, the photodiode area is covered by photoresist, and the photodiode isolation structure area is exposed for ion implantation. In the CIS process, the deep photodiode isolation structure generally adopts boron (B) ion implantation. Such as Figure 1A As shown, the photodiode isolation structure of the CMOS image sensor is in a symmetrical horizontal and vertical cross shape to isolate each photodiode (PD) area.

[0022] In the manufacturing process of the CMOS image sensor, the photolithography process for ion implantation of the photodiode isolation structure is a major technical difficulty, especially in the small-size CIS process.

[0023] The most intuitive effect o...

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Abstract

The present disclosure relates to lithography for image sensors. The present disclosure proposes an image sensor lithography method. The method comprises the steps of: an ion implantation step of performing deep photodiode isolation structure ion implantation in an overlapping manner by performing at least twice exposures such that an expected deep photodiode isolation structure ion implantation region is formed by stacking of the deep photodiode isolation structure ion implantation regions formed through at least twice exposures, wherein the interval size in the deep photodiode isolation structure ion implantation region formed in each exposure in the at least twice exposures is larger than the interval size of the expected deep photodiode isolation structure ion implantation region.

Description

Technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to lithography for image sensors. Background technique [0002] An image sensor is an electronic device used to convert an optical image focused on the image sensor into an electrical signal. The image sensor can be used in an imaging device such as a digital camera, so that light received by the imaging device is converted into a digital image. Common image sensors include complementary metal oxide semiconductor (CMOS) image sensor (CMOS image sensor, CIS) and charge coupled device (CCD) sensors, which are widely used in various imaging applications, such as digital cameras or mobile phone camera applications . [0003] CMOS image sensors have been widely used in social life and industrial production fields such as digital electronic products, medical equipment, and industrial monitoring due to their low power consumption, low cost, and high performance. Currently, CMOS imag...

Claims

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Application Information

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IPC IPC(8): H01L27/146G03F7/20
CPCG03F7/2022H01L27/1463H01L27/14643H01L27/14683
Inventor 佟璐陈世杰黄晓橹
Owner HUAIAN IMAGING DEVICE MFGR CORP
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