Reliability testing method, device and system of gan device

A testing method and testing device technology, which are applied in the direction of single semiconductor device testing, measuring devices, instruments, etc., can solve the problem that the reliability of GaN devices cannot be effectively and accurately evaluated, and achieve the effect of simple and easy-to-operate testing methods.

Active Publication Date: 2021-10-15
CHINA ELECTRONICS PROD RELIABILITY & ENVIRONMENTAL TESTING RES INST
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Problems solved by technology

[0004] Based on this, it is necessary to provide a reliability testing method, device and system for GaN devices to solve the problem that the reliability of GaN devices cannot be effectively and accurately evaluated

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  • Reliability testing method, device and system of gan device
  • Reliability testing method, device and system of gan device
  • Reliability testing method, device and system of gan device

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Embodiment Construction

[0041] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. A preferred embodiment of the application is shown in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.

[0042] It should be noted that when an element is considered to be "connected" to another element, it may be directly connected to and integrally integrated with the other element, or there may be an intervening element at the same time.

[0043] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in th...

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Abstract

The present application relates to a reliability testing method, device and system for GaN devices. The reliability testing method obtains the instantaneous current curve of the GaN device; wherein, the instantaneous current curve is obtained by applying a pulse signal to the GaN device; the pulse signal is a signal with a pulse width less than or equal to 1 microsecond. Based on the analysis of the instantaneous current curve, the reliability analysis results of the GaN device are obtained. A pulse signal with a small pulse width can apply short pulse electrical stress to the GaN device, and the gate region of the GaN device can apply a large transient cumulative voltage stress; at the same time, real-time monitoring and analysis of the current of the GaN device after each short pulse electrical stress Waveforms can obtain the dynamic whole-process behavior of device degradation and failure. The test method of the embodiment of the present application is simple and easy to operate. Under the condition of short pulse, a higher voltage intensity than the traditional test method can be applied, and the reliability of the device can be analyzed, and the advantages and disadvantages of different device structural parameters can be compared. .

Description

technical field [0001] The present application relates to the technical field of electronic device testing, in particular to a GaN (gallium nitride) device reliability testing method, device and system. Background technique [0002] The third-generation semiconductor materials represented by GaN materials have become a hot spot in the research of power electronic devices by virtue of their superior material properties such as large band gap, high breakdown electric field, high electron mobility, and high thermal conductivity. electronics industry. [0003] Although commercial power electronic devices of GaN materials have been launched, in the process of realization, the inventors found at least the following problems in the traditional technology: the reliability of GaN devices cannot be effectively and accurately evaluated, which restricts their application in power electronic modules and terminal applications Promotional applications on the system. Contents of the inve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2603
Inventor 贺致远陈义强方文啸苏伟肖庆中恩云飞
Owner CHINA ELECTRONICS PROD RELIABILITY & ENVIRONMENTAL TESTING RES INST
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