Reliability testing method, device and system of gan device

Abstract

The present application relates to a reliability testing method, device and system for GaN devices. The reliability testing method obtains the instantaneous current curve of the GaN device; wherein, the instantaneous current curve is obtained by applying a pulse signal to the GaN device; the pulse signal is a signal with a pulse width less than or equal to 1 microsecond. Based on the analysis of the instantaneous current curve, the reliability analysis results of the GaN device are obtained. A pulse signal with a small pulse width can apply short pulse electrical stress to the GaN device, and the gate region of the GaN device can apply a large transient cumulative voltage stress; at the same time, real-time monitoring and analysis of the current of the GaN device after each short pulse electrical stress Waveforms can obtain the dynamic whole-process behavior of device degradation and failure. The test method of the embodiment of the present application is simple and easy to operate. Under the condition of short pulse, a higher voltage intensity than the traditional test method can be applied, and the reliability of the device can be analyzed, and the advantages and disadvantages of different device structural parameters can be compared. .

Description

technical field [0001] The present application relates to the technical field of electronic device testing, in particular to a GaN (gallium nitride) device reliability testing method, device and system. Background technique [0002] The third-generation semiconductor materials represented by GaN materials have become a hot spot in the research of power electronic devices by virtue of their superior material properties such as large band gap, high breakdown electric field, high electron mobility, and high thermal conductivity. electronics industry. [0003] Although commercial power electronic devices of GaN materials have been launched, in the process of realization, the inventors found at least the following problems in the traditional technology: the reliability of GaN devices cannot be effectively and accurately evaluated, which restricts their application in power electronic modules and terminal applications Promotional applications on the system. Contents of the inve...

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Problems solved by technology

[0004] Based on this, it is necessary to provide a reliability testing method, device and system for GaN devices to solve the problem that the reliability of GaN devices cannot be effectively and accurately evaluated

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