Silicon heterojunction solar cell and preparation method thereof

Abstract

The invention provides a silicon heterojunction solar cell. The silicon heterojunction solar cell sequentially comprises a back electrode, an N type substrate, an N-nanowire array, an I-intrinsic amorphous layer, a P-transparent NiO conductive layer and an upper electrode, wherein the N-nanowire array is obtained by performing secondary etching on a nanowire cluster formed by etching on the basisof the N type substrate through an alkaline reagent, and comprises a plurality of nanowires which are not in contact with each other and have upper sharp parts and lower thick parts; and the N-nanowire array, the I-intrinsic amorphous layer and the P-transparent NiO conductive layer form a radial heterojunction. According to the solar cell, the cluster of the nanowire array is eliminated through secondary etching, and a phenomenon of lost due to that a large amount of incident sunlight is reflected by the nanowire cluster can be avoided on the premise that enough length is ensured; and in addition, passivation treatment on the nanowire array can be realized through the I-intrinsic amorphous layer, and the performance of the silicon heterojunction solar cell is ensured.

Description

technical field [0001] The invention relates to the technical field of batteries, in particular to a silicon heterojunction solar battery and a preparation method thereof. Background technique [0002] Due to the excellent optical and electrical properties of silicon nanowire arrays, silicon nanowire array cells have attracted extensive research, and various silicon nanowire array solar cells have emerged. Among them, the silicon nanowire radial heterojunction cell prepared by CVD method is a new type of solar cell developed by integrating nanotechnology, heterojunction technology, and thin film technology. development prospects. [0003] Silicon nanowire arrays have a good light trapping effect and can absorb more sunlight, but too long nanowires will collapse and cause obvious clusters, causing the incident light from the sun to be reflected and lost; too short nanowires to absorb sunlight The capacity is relatively limited, and the large surface area of ​​the nanowire a...

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Problems solved by technology

[0003] Silicon nanowire arrays have a good light trapping effect and can absorb more sunlight, but too long nanowires will collapse and cause obvious clusters, causing the incident light from the sun to be reflected and lost; too short nanowires to absorb sunlight The capacity is relatively limited, and the large surface area of ​​the nanowire array increases the surface recombination. If there is no suitable passivation method, the performance of the battery will inevitably be attenuated. Therefore, the optimal design of the structure and shape of the silicon nanowire array is crucial to improving battery performance. important

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