Transmission electron microscope sample and method for producing same

Abstract

The invention discloses a transmission electron microscope sample. The sample sequentially comprises a silicon substrate, a polycrystalline silicon layer, a silicon nitride layer, a silicon dioxide thin film layer grown on the basis of a high aspect ratio process, an undoped silicate glass layer, an electron beam protection layer and an ion beam protection layer from bottom to top, wherein the undoped silicate glass layer has a first thickness, the silicon dioxide thin film layer grown on the basis of the high aspect ratio process has a second thickness, the silicon substrate, the polycrystalline silicon layer and the silicon nitride layer have a third thickness, and the values of the first thickness, the second thickness and the third thickness are different from one another. The invention further discloses a manufacturing method of the transmission electron microscope sample. The transmission electron microscope sample prepared by the method disclosed by the invention can be used fordirectly obtaining thickness information of the silicon dioxide films grown in different growth modes through observation of images of the transmission electron microscope.

Description

technical field [0001] The present application relates to the field of semiconductor integrated circuits, in particular to a method for manufacturing a transmission electron microscope sample. The present application also relates to a transmission electron microscope sample. Background technique [0002] In the manufacture of semiconductor integrated circuits, silicon dioxide is an excellent insulating material, which is amorphous. The structure of silicon dioxide can be considered as four oxygen atoms located at the corners of a triangular polyhedron, and the center of the polyhedron is a silicon atom. In this way, every 4 oxygen atoms are approximately covalently bonded to silicon atoms, satisfying the valence shell of silicon. Silicon dioxide generally does not react with water, that is, it does not generate silicic acid in contact with water. Because silicon dioxide has extremely stable chemical properties, it can be used as a gap between the upper and lower metal layer...

AI Technical Summary

Problems solved by technology

At this time, if the engineer needs to measure the thickness of different films or identify which film layer the particle defect is generated from, the ordinary TEM sample preparation method will not be able to meet this requirement, and the difference in contrast of the TEM image cannot distinguish between different doped oxides. Silicon films, such as figure 1 shown

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