Terahertz detector based on non-periodically rasterized gate-source MOSFET

Abstract

The invention discloses a terahertz detector based on non-periodically rasterized gate-source MOSFET. The detector includes a metal gate MOSFET having the non-periodically rasterized gate-source and various patterns, a low noise preamplifier and a voltage feedback loop, wherein the gate and the source of the metal gate MOSFET are both used for receiving terahertz signals, the gate of the metal gate MOSFET is connected with a first bias voltage source through a first bias resistor, a first blocking capacitor is connected between a drain of the metal gate MOSFET and a forward input end of the low noise preamplifier, the forward input end of the low noise preamplifier is connected with a second bias voltage source through a second bias resistor, and the voltage feedback loop includes a feedback resistor, a grounding resistor, a second blocking capacitor and a third blocking capacitor. The detector is advantaged in that the THz response band range is adjusted through adjusting rasterized structure parameters of the gate and the source, and thereby detection sensitivity of the detector is improved.

Description

Technical field [0001] The invention relates to the technical field of terahertz detectors, and more specifically, to a terahertz detector based on aperiodic grating gate-source MOSFET. Background technique [0002] Terahertz waves are electromagnetic waves between microwaves and infrared light on the electromagnetic spectrum, with a frequency of about 0.1 to 10 THz and a wavelength corresponding to 3 mm to 30 μm. Terahertz technology is currently one of the frontiers and hotspots of information science and technology research. In recent years, it has received extensive attention from research institutions around the world. Developed countries such as the United States, Japan, and Europe have successively assessed terahertz technology as "ten technologies that will change the world in the future" and "ten key strategic goals of national pillar technologies", and have invested heavily to consolidate their international status in the terahertz field. Terahertz has a wide range of ...

AI Technical Summary

Problems solved by technology

At present, the existing detectors based on CMOS compatible technology generally have many shortcomings such as slow response speed, low sensitivity, high price, and usually need to work at low temperature, which largely limits the integrated application and development of terahertz technology.

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