Semiconductor device and method of forming same
A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as performance to be improved, and achieve the effects of improving performance, increasing driving current, and avoiding excessive resistance
Active Publication Date: 2019-04-19
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF11 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004]
However, the performance of semiconductor devices composed of fin field effect transistors in the prior art still needs to be improved
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0029] As mentioned in the background, semiconductor devices formed in the prior art have poor performance.
[0030] Figure 1 to Figure 3 It is a structural schematic diagram of the formation process of a semiconductor device.
[0031] combined reference figure 1 and figure 2 , figure 2 for along figure 1 The cross-sectional view of cutting line X-Y in the middle provides a semiconductor substrate 100 with several fins 110 and an isolation layer 101 covering part of the sidewalls of the fins 110 on the semiconductor substrate 100, and the exposed fins of the isolation layer 101 include replacement regions Form the gate structure 120 across the fin 110 on the semiconductor substrate 100 and the isolation layer 101, and the fin replacement regions are respectively located on both sides of the gate structure 120; during the process of forming the first fin spacer 130b, the first Gate spacer 130a, the first fin sidewall 130b is located on the sidewall of the replacement r...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The present invention provides a semiconductor device and a method of forming the same. The method comprises the steps of: providing a semiconductor substrate having a plurality of fins and an isolation layer covering the side walls of the fins; forming a gate structure on the semiconductor substrate and the isolation layer, the gate structure spanning the fins, the surfaces of the part of top portions covering the fins and the surfaces of the part of the side walls, wherein the fins at two sides of the gate structure have replacement regions; employing a selectivity epitaxial growth process to form a sacrificial layer located at the surface of the isolation layer at the side walls of the replacement regions of the fins; forming a fin side wall located at the surface of the isolation layerat the side wall of the sacrificial layer, and in the process of forming the fin side wall, forming an interval side wall at the side wall of the gate structure; removing the replacement regions andthe sacrificial layer at the two sides of the gate structure and the interval side wall, forming grooves in the fin portions, and exposing the fin side all at the side walls of the two sides of the grooves in the width directions of the fins; and forming source and drain doping layers in the grooves. The method can improve the performances of the semiconductor device.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] MOS (Metal-Oxide-Semiconductor) transistors are one of the most important components in modern integrated circuits. The basic structure of the MOS transistor includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and the gate structure includes: a gate dielectric layer located on the surface of the semiconductor substrate and a gate electrode layer located on the surface of the gate dielectric layer; The source and drain doped regions in the semiconductor substrate on both sides of the pole structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin FET) i...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/66795H01L29/785
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP