Reliability nondestructive detection device of high-power diode for vehicle

Abstract

The invention discloses a reliability nondestructive detection device of a high-power diode for a vehicle. The reliability nondestructive detection device comprises a machine box, a shielding box, a shielding plate, a detection table, a biasing circuit, a preamplifier, a spectrum analyzer, a computer, a box door, a first slide groove, installing assemblies and a base, and is characterized in thatthe preamplifier is arranged inside the machine box; the shielding box is arranged at the top of the preamplifier; the detection table is fixedly arranged inside the shielding box; the biasing circuitis arranged inside the detection table; the spectrum analyzer is arranged at the outer side of the preamplifier; the computer is arranged at the outer side of the spectrum analyzer; two installing assemblies are arranged at the top of the detection table. The reliability nondestructive detection device of the high-power diode for the vehicle has the advantages that in the use process, the screening accuracy can be effectively improved; the screening with small defects can also be realized; tested products cannot be damaged; the nondestructive detection is realized; meanwhile, the screening period is shortened; the screening cost is reduced.

Description

technical field [0001] The invention relates to the field of reliability testing equipment for semiconductor devices, in particular to a reliability non-destructive testing device for high-power diodes used in vehicles. Background technique [0002] High-power diodes for vehicles are semiconductor devices. The reliability testing of semiconductor devices has always been a difficult problem in the semiconductor industry. At present, the commonly used method is stress screening. [0003] Stress screening includes electrical stress screening and thermal stress screening. Electrical stress screening applies intermittent large current to the diode, and the heat generated by the diode's own power consumption causes the temperature to change, thereby generating thermal stress. Thermal stress screening is to apply heat to the outside of the diode, and the external heat is transferred to the inside of the diode to generate internal stress. Therefore, both electrical stress screenin...

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Problems solved by technology

[0006] 1) Defective products cannot be completely screened out; chip defects can be large or small, and products with larger defects can be screened out after stress screening, but the electrical properties of products with smaller defects have not deteriorated to the extent that they can be tested after stress screening, thus Early failure of flow to market;

[0007] 2) It may cause damage to good products without defects; stress screening is essentially a destructive test, which will inevitably cause damage to good products. If the damage does not deteriorate the electrical properties to the extent that it can be measured, it will also flow to the market and cause early failure;

[0008] 3) The screening period is long and the cost is high; the high and low temperature cycle usually takes dozens to hundreds of hours, which is long and consumes a lot of power, so the cost is high;

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