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MEMS structure and method for manufacturing the same

A technology of deep junction and doped region, applied in the field of MEMS structure and its manufacturing, can solve the problem that the size of the pressure sensor is difficult to reduce, and achieve the effects of improved accuracy and yield, high sensitivity, and simplified process

Pending Publication Date: 2019-04-26
HANGZHOU SILAN INTEGRATED CIRCUIT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, it is difficult to reduce the size of the pressure sensor

Method used

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  • MEMS structure and method for manufacturing the same
  • MEMS structure and method for manufacturing the same
  • MEMS structure and method for manufacturing the same

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Embodiment Construction

[0062]Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown.

[0063] In the following, many specific details of the present invention are described, such as device structures, materials, dimensions, processing techniques and techniques, for a clearer understanding of the present invention. However, the invention may be practiced without these specific details, as will be understood by those skilled in the art.

[0064] The invention can be embodied in various forms, some examples of which are described below.

[0065] Figures 1 to 13 The cross-sectional views of various stages of the manufacturing method of the MEMS structure according to the embodiment of the present invention are shown respective...

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Abstract

The application discloses an MEMS structure and a method for manufacturing the same. The method comprises the following steps: forming a cavity in a semiconductor substrate; forming sensitive films onthe cavity; and forming a plurality of sensitive resistors in the sensitive films, wherein the sensitive films comprise an island portion and a connection portion surrounding the island portion, theisland portion having a thickness greater than that of the connection portion, and the plurality of sensitive resistors are located at the connection portion. The method uses sensitive films of uneventhicknesses to concentrate the pressure on the joint to improve sensitivity.

Description

technical field [0001] The present invention relates to the field of microelectronics, and more particularly, to MEMS structures and fabrication methods thereof. Background technique [0002] MEMS devices are microelectromechanical devices developed on the basis of microelectronics technology and manufactured by micromachining technology, and have been widely used as sensors and actuators. For example, MEMS devices can be pressure sensors, accelerometers, gyroscopes, silicon condenser microphones. [0003] A pressure sensor includes, for example, a sensor chip and a circuit chip assembled together. Among them, the MEMS structure is formed in the sensor chip, and the detection circuit is formed in the circuit chip. Then, through chip bonding technology, the sensor chip and the circuit chip are bonded together to form a MEMS component. [0004] Depending on the detection element and method, pressure sensors can be divided into many different types, including piezoresistive,...

Claims

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Application Information

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IPC IPC(8): B81B7/02B81C1/00
CPCB81B7/02B81C1/00158B81B2201/0264
Inventor 季锋江为团刘琛闻永祥
Owner HANGZHOU SILAN INTEGRATED CIRCUIT
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