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Uniform speed slicing device for polycrystalline silicon ingot processing

A technology of slicing device and polycrystalline silicon ingot, which is applied to fine working devices, stone processing equipment, working accessories, etc., can solve the problems of multiple scratches on the cutting surface of polycrystalline silicon wafers, different advancing speeds, and large environmental pollution. Scratches, reduced section breaks, improved quality effects

Inactive Publication Date: 2019-05-03
安徽华顺半导体发展有限公司
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0007] Aiming at the deficiencies of the prior art, the present invention provides a uniform-speed slicing device for processing polycrystalline silicon ingots, which overcomes the deficiencies of the prior art, has a reasonable design and a compact structure, and effectively solves the problem of traditional mortar cutting, which not only pollutes the environment but also Moreover, the surface damage is large and the speed of advancement is different during cutting, which leads to the problem of more scratches on the cutting surface of polycrystalline silicon wafers.

Method used

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  • Uniform speed slicing device for polycrystalline silicon ingot processing
  • Uniform speed slicing device for polycrystalline silicon ingot processing
  • Uniform speed slicing device for polycrystalline silicon ingot processing

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Embodiment Construction

[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0031] Refer to attached Figure 1-2 A uniform-speed slicing device for processing polycrystalline silicon ingots provided by an embodiment of the present invention includes a processing table 1 and a plurality of support feet installed at the lower end of the processing table 1, and two support seats 2 are symmetrically installed on the upper end...

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Abstract

The invention relates to the technical field of polycrystalline silicon processing equipment, in particular to a uniform speed slicing device for polycrystalline silicon ingot processing. The uniformspeed slicing device for polycrystalline silicon ingot processing comprises a processing table and a plurality of supporting feet installed at the lower end of the processing table; two supporting bases are symmetrically installed at the upper end of the processing table; supporting columns are installed at the upper ends of the supporting bases; a top plate is arranged at the upper ends of the supporting columns; the lower end of the top plate is provided with a slicing device body through a plurality of electric hydraulic rods; and a fixing assembly is arranged below the slicing device body,and is installed at the upper end of the processing table. The uniform speed slicing device for polycrystalline silicon ingot processing overcomes the defects in the prior art, is reasonable in design and compact in structure, and effectively solves the problems that traditional mortar cutting is large in environment pollution, surface damage is large during cutting, the propelling speeds are notconsistent, and consequently lots of scratches exist on the cut faces of polycrystalline silicon chips.

Description

technical field [0001] The invention relates to the technical field of polysilicon processing equipment, in particular to a uniform-speed slicing device for processing polysilicon ingots. Background technique [0002] Polysilicon is a form of elemental silicon. When molten elemental silicon is solidified under supercooled conditions, silicon atoms are arranged in the form of diamond lattices to form many crystal nuclei. If these crystal nuclei grow into crystal grains with different crystal plane orientations, these crystal grains combine to crystallize into polycrystalline silicon. . [0003] Polysilicon has a wide range of utilization values. From the current development process of international solar cells, it can be seen that its development trend is monocrystalline silicon, polycrystalline silicon, ribbon silicon, and thin film materials (including microcrystalline silicon-based thin films, compound-based thin films and dye thin films). [0004] The existing polysilic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04B28D7/00
Inventor 李广森
Owner 安徽华顺半导体发展有限公司
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