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Method, device and model for evaluating reliability of IGBT device in high-voltage direct-current circuit breaker

A high-voltage direct current, reliable technology, applied in the direction of instruments, special data processing applications, electrical digital data processing, etc., can solve the problems of low accuracy of evaluation results and high accuracy of reliability evaluation results

Pending Publication Date: 2019-05-03
STATE GRID CORP OF CHINA +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to overcome the shortcomings of the low accuracy of evaluation results in the above-mentioned prior art, the present invention provides a method and device for evaluating the reliability of IGBT devices in high-voltage DC circuit breakers. The obtained capacitance discharge curve is substituted into a pre-built simulation model to obtain a simulation model The evaluation parameters of the IGBT device in the semiconductor unit; the obtained current curve flowing through the IGBT device in the semiconductor module is substituted into the pre-built simulation model to obtain the evaluation parameters of the IGBT device in the evaluated semiconductor module; based on the IGBT in the semiconductor unit The evaluation parameters of the device and the evaluation parameters of the IGBT device in the semiconductor module evaluate the reliability of the IGBT device in the semiconductor module; the evaluation parameters include junction temperature curves, turn-off moments and the highest junction temperature, and the simulation model includes semiconductor units. The present invention obtains High accuracy of reliability evaluation results

Method used

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  • Method, device and model for evaluating reliability of IGBT device in high-voltage direct-current circuit breaker
  • Method, device and model for evaluating reliability of IGBT device in high-voltage direct-current circuit breaker
  • Method, device and model for evaluating reliability of IGBT device in high-voltage direct-current circuit breaker

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Embodiment 1

[0082] Embodiment 1 of the present invention provides a method for evaluating the reliability of IGBT devices in a high-voltage DC circuit breaker, wherein the high-voltage DC circuit breaker includes a transfer branch, and the transfer branch includes a semiconductor module. Embodiment 1 of the present invention is the transfer branch The reliability of the IGBT device of the semiconductor module is evaluated, and the specific flow chart of the embodiment of the present invention 1 is as follows image 3 As shown, the specific process is as follows:

[0083] S101: Substituting the obtained capacitor discharge curve into a pre-built simulation model to obtain evaluation parameters of the IGBT device of the semiconductor unit in the simulation model;

[0084] S102: Substituting the obtained current curve flowing through the IGBT device in the semiconductor module into a pre-built simulation model to obtain evaluation parameters of the IGBT device in the semiconductor module to ...

Embodiment 2

[0117] Based on the same inventive concept, Embodiment 2 of the present invention also provides a device for evaluating the reliability of IGBT devices in a high-voltage DC circuit breaker, including a first determination module, a second determination module, and an evaluation module, wherein the high-voltage DC circuit breaker includes a transfer branch , the transfer branch includes a semiconductor module; the functions of the determination module and the evaluation module are described in detail below:

[0118] Wherein the first determination module is used for substituting the obtained capacitor discharge curve into the pre-built simulation model to obtain the evaluation parameters of the IGBT device of the semiconductor unit in the simulation model;

[0119] The second determining module is used for substituting the obtained current curve flowing through the IGBT device in the semiconductor module into a pre-built simulation model to obtain evaluation parameters of the IG...

Embodiment 3

[0151] Embodiment 3 of the present invention provides a simulation model, such as Figure 4 , including a semiconductor unit, a discharge equivalent unit, an IGBT resistance unit and an IGBT thermal resistance unit; the discharge equivalent unit is connected to the semiconductor unit, and the semiconductor unit is connected to the IGBT thermal resistance unit through the IGBT resistance unit.

[0152] The discharge equivalent unit includes a capacitor C, an inductor L, a discharge switch S and a diode D connected in antiparallel with the discharge switch S;

[0153] The semiconductor unit includes IGBT1, IGBT2, diode D1, diode D2, diode D3, diode D4, diode D5, capacitor C1 and arrester BOD;

[0154] The anode of diode D1 is connected to common point A, and its cathode is connected to common point M; the cathode of diode D2 is connected to common point A, and its cathode is connected to common point N; the anode of diode D3 is connected to common point B, and its cathode is con...

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Abstract

The invention provides a method and device for evaluating the reliability of an IGBT device in a high-voltage direct-current circuit breaker. substituting the obtained capacitance discharge curve andthe obtained current curve of the IGBT device flowing through the semiconductor module into a pre-constructed simulation model respectively to obtain evaluation parameters of the IGBT device in the semiconductor unit and the semiconductor module respectively; evaluating the reliability of the IGBT device in the semiconductor module based on the evaluation parameters of the IGBT device in the semiconductor unit and the evaluation parameters of the IGBT device in the semiconductor module; wherein the evaluation parameters comprise a junction temperature curve, a turn-off time and a highest junction temperature, and the simulation model comprises a semiconductor unit. The obtained reliability assessment result is high in accuracy; the junction temperature and current values of the IGBT devicein the simulation model at the turn-off moment and the junction temperature and current values of the IGBT device in the DC circuit breaker at the turn-off moment under actual working conditions canbe accurately reflected; the method provides a basis for verifying whether the IGBT device in the direct current circuit breaker can meet the requirements of special working conditions of the direct current circuit breaker, and is simple, easy to implement and easy to implement.

Description

technical field [0001] The invention relates to the technical field of high-voltage direct current transmission, in particular to a reliability evaluation method, device and simulation model of an IGBT device in a high-voltage direct current circuit breaker. Background technique [0002] Due to its good characteristics, the DC transmission network based on flexible DC transmission has become one of the hot spots in the international power field, and will also be an important part of the future grid construction. Due to the relatively low damping of the DC system, the rising rate of the fault current in the DC system is fast, and it is required to realize the fault current removal within milliseconds. Therefore, a high-voltage DC circuit breaker with high-current and ultra-high-speed breaking has become one of the core equipment for building a DC power grid. [0003] Hybrid DC circuit breakers such as figure 1 As shown, it includes a parallel main branch, a transfer branch ...

Claims

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Application Information

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IPC IPC(8): G06F17/50
Inventor 高阳刘栋庞辉高冲林畅
Owner STATE GRID CORP OF CHINA