3D memory device and manufacturing method thereof

Abstract

Disclosed is a 3D memory device, comprising: a substrate; a stacked structure on the substrate, the stacked structure including a plurality of conductor layers and a plurality of insulating layers stacked alternately; a plurality of memory strings running through the The stacked structure; a plurality of conductive channels running through the stacked structure; wherein, the plurality of storage strings are in a honeycomb structure, and each of the conductive channels is located at the center of the honeycomb structure and is used to pass through the substrate and supplying power to the plurality of storage strings around it. The present invention also provides a manufacturing method of the 3D memory device provided by the present invention, using the common source hole as a deposition channel to replace the sacrificial layer in the laminated structure with a conductor layer, and using the common source hole to form a common source conductive channel, avoiding the formation of gaps between the conductor layer in the gate stack structure and the common-source conductive channel.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a 3D memory device and a manufacturing method thereof. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. [0003] Existing 3D memory devices are mainly used as non-volatile flash memory. The two main non-volatile flash memory technologies use NAND and NOR structures, respectively. Compared with...

AI Technical Summary

Problems solved by technology

However, in the gate conductor, due to the incomplete filling between the channel holes, the gate conductor reactive gas residue (such as fluorine) attacks the insulating layer, resulting in a short circuit between the gate conductor and the conductive channel, which makes the 3D memory device fail

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