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A Life Prediction Method of igbt Module under Non-stationary Working Condition

A life prediction, non-stationary technology, used in single semiconductor device testing, instrumentation, design optimization/simulation, etc., can solve problems such as poor prediction accuracy of life prediction models

Active Publication Date: 2021-07-16
BEIHANG UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

With the improvement of IGBT module structure technology, the existing life prediction model has poor prediction accuracy under narrow junction temperature amplitude; at the same time, IGBT modules are often used in non-stationary working conditions, so it is necessary to IGBT module life prediction

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  • A Life Prediction Method of igbt Module under Non-stationary Working Condition
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  • A Life Prediction Method of igbt Module under Non-stationary Working Condition

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Embodiment Construction

[0044] In the following, the present invention will be further described in detail in conjunction with the accompanying drawings and the IGBT junction temperature prediction method under non-stationary working conditions.

[0045] The invention discloses a method for simulating the extreme low temperature characteristics of a typical CMOS device, and the specific steps are as follows:

[0046] Step 1: Investigation of the degradation mechanism of the IGBT module

[0047]The degradation mechanisms of IGBT modules can be divided into chip-related degradation mechanisms (such as time-dependent dielectric breakdown, electromigration, and aluminum metallization reconfiguration, etc.) and module packaging-related degradation mechanisms. Chip-related degradation is usually related to semiconductor physics, which is caused by internal defects in silicon materials and eventually leads to device degradation and failure. Although this failure is different from the degradation failure ca...

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Abstract

The invention relates to a method for predicting the life of an IGBT module under non-stationary working conditions, comprising the following steps: Step 1: investigation of the degradation mechanism of the IGBT module; Step 2: establishment of the electrical model of the IGBT module; Step 3: solution of the parameters of the IGBT electrical model based on Simulink Step 4: On-line monitoring of junction temperature considering degradation characteristics; Step 5: Establishment of narrow junction temperature amplitude life prediction model; Step 6: Construction of power cycle test platform; Step 7: Establishment of narrow junction temperature amplitude life prediction model; Eight: Non-stationary working condition IGBT module life prediction model. The present invention first calculates the junction temperature-time curve of the power module under actual working conditions based on the device electrothermal model and the work task profile, and extracts the corresponding junction temperature fluctuation information; then, based on the life prediction model of the power module, calculates different junction temperature fluctuations The cumulative damage caused to the device; finally, the MTTF of the IGBT module under actual working conditions is evaluated in combination with the number of junction temperature stress cycles. The method belongs to the technical field of IGBT module life evaluation.

Description

[0001] (1) Technical field: [0002] The invention relates to a method for predicting the life of an IGBT module under non-stationary working conditions, which calculates the junction temperature-time curve of the power module under actual working conditions based on the device electrothermal model and the working task profile, and extracts the corresponding junction temperature fluctuation information; and then , based on the life prediction model of the power module, the cumulative damage to the device caused by different junction temperature fluctuations is calculated; finally, the MTTF of the IGBT module under actual working conditions is evaluated by combining the number of junction temperature stress cycles. The method belongs to the technical field of IGBT module life evaluation. [0003] (two) background technology: [0004] Because the insulated gate bipolar transistor (IGBT) module has the advantages of high voltage stress, high current density, low turn-on voltage an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26G06F30/20G06F119/04G06F119/02
Inventor 付桂翠姜贸公冷红艳程禹
Owner BEIHANG UNIV