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Sensitive thin film in thin film pressure sensor and its manufacturing method and application

A thin film pressure, sensitive thin film technology, applied in the measurement of the property force of piezoelectric resistance materials, fluid pressure measurement by changing ohmic resistance, instruments, etc., can solve the problem of large resistance temperature coefficient, poor corrosion resistance, thin film shedding and other problems, to achieve high sheet resistance, large strain factor, and reduce the temperature coefficient of resistance

Active Publication Date: 2021-05-07
RES INST OF XIAN JIAOTONG UNIV & SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, nickel-chromium alloy and tantalum nitride are used as sensitive thin-film materials for thin-film pressure sensors. Although these two materials have a series of excellent characteristics, there are still many problems in practical applications: (1) The bonding force between the film and the substrate The problem is that when the thickness of the film is large, the film will fall off from the substrate due to excessive internal stress; (2) it has a large temperature coefficient of resistance, and it is not suitable for measurement in an environment with severe temperature changes; (3) widen the film The strain range, so that the relative change of the resistance of the film in the widest possible strain range becomes linear with the strain; (4) The corrosion resistance is not good

Method used

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  • Sensitive thin film in thin film pressure sensor and its manufacturing method and application
  • Sensitive thin film in thin film pressure sensor and its manufacturing method and application
  • Sensitive thin film in thin film pressure sensor and its manufacturing method and application

Examples

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Embodiment 1

[0053] The present embodiment provides a kind of sensitive thin film in thin film pressure sensor, and its material is (Ni 0.8 Cr 0.2 ) 0.85 Ta 0.1 N 0.05 .

[0054] The above-mentioned sensitive film in the present embodiment adopts following method to prepare: (1) adopts radio frequency magnetron sputtering method to bombard Ni 0.8 Cr 0.2 target and Ta target, while sputtering, pass Ar gas and N into the reaction chamber 2 The mixed gas, control N 2 The flow rate is 5 sccm, the Ar flow rate is 100 sccm, and the background vacuum is 2×10 -4 , the deposition power is 300W, the deposition time is 2000s, the deposition temperature is 100°C, and the deposition pressure is 0.6Pa. According to the test results of secondary ion mass spectrometry (SIMS), it was confirmed that (Ni 0.8 Cr 0.2 ) 0.85 Ta 0.1 N 0.05 precursor film. (2) will (Ni 0.8 Cr 0.2 ) 0.85 Ta 0.1 N 0.05 Precursor film in N 2 Under the atmosphere, control the heating rate of 10°C / min to raise the ...

Embodiment 2

[0061] The present embodiment provides a kind of sensitive thin film in thin film pressure sensor, and its material is (Ni 0.8 Cr 0.2 ) 0.8 Ta 0.1 N 0.1 .

[0062] The above-mentioned sensitive film in the present embodiment adopts following method to prepare: (1) adopts radio frequency magnetron sputtering method to bombard Ni 0.8 Cr 0.2 target and Ta target, while sputtering, pass Ar gas and N into the reaction chamber 2 The mixed gas, control N 2 The flow rate is 28sccm, the Ar flow rate is 92sccm, and the background vacuum is 2×10 -4 , the deposition power is 100W, the deposition time is 2000s, the deposition temperature is 100°C, and the deposition pressure is 3Pa. According to the test results of secondary ion mass spectrometry (SIMS), it was confirmed that (Ni 0.8 Cr 0.2 ) 0.8 Ta 0.1 N 0.1 precursor film. (2) will (Ni 0.8 Cr 0.2 ) 0.8 Ta 0.1 N 0.1 Precursor film in N 2 Under the atmosphere, the temperature was raised to 900° C. at a controlled rate o...

Embodiment 3

[0068] The present embodiment provides a kind of sensitive thin film in thin film pressure sensor, and its material is (Ni 0.5 Cr 0.5 ) 0.75 Ta 0.12 N 0.13 .

[0069] The above-mentioned sensitive film in the present embodiment adopts following method to prepare: (1) adopts radio frequency magnetron sputtering method to bombard Ni 0.5 Cr 0.5 target and Ta target, while sputtering, pass Ar gas and N into the reaction chamber 2 The mixed gas, control N 2 The flow rate is 10sccm, the Ar flow rate is 70sccm, and the background vacuum is 5×10 -5 , the deposition power is 200W, the deposition time is 1000s, the deposition temperature is 300°C, and the deposition pressure is 3Pa. According to the test results of secondary ion mass spectrometry (SIMS), it was confirmed that (Ni 0.5 Cr 0.5 ) 0.75 Ta 0.12 N 0.13 precursor film. (2) will (Ni 0.5 Cr 0.5 ) 0.75 Ta 0.12 N 0.13 Precursor film in N 2 Under the atmosphere, control the heating rate of 30°C / min to raise the t...

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Abstract

The invention discloses a sensitive thin film in a thin film pressure sensor, the material of the sensitive thin film is (Ni m Cr 1‑m ) 1‑x‑ y Ta x N y ; Wherein, m is 0.1-0.9, x is 0.05-0.4, and y is 0.05-0.4. The invention also discloses a thin-film pressure sensor, which includes a sensor core, and the sensor core includes: a substrate; an insulating layer arranged on the substrate; a patterned sensitive film layer arranged on the insulating layer; Four electrodes on the film layer; and a protective layer covering the part of the patterned sensitive film layer that is not blocked by the four electrodes; wherein the patterned sensitive film layer is the above-mentioned sensitive film. The invention also discloses a manufacturing method of the sensitive thin film. The sensitive thin film of the invention has lower temperature coefficient of resistance, higher thermal stability, higher resistivity and sheet resistance than the thin films generally used in thin film pressure sensors in the prior art.

Description

technical field [0001] The invention belongs to the technical field of sensors and their manufacture, and specifically relates to a sensitive thin film in a thin film pressure sensor, a manufacturing method thereof, and an application of the sensitive thin film in a thin film pressure sensor. Background technique [0002] Sensor technology is one of the important technologies of modern measurement and automation systems. From space development to seabed exploration, from production process control to modern civilized life, almost every technology is inseparable from sensors. Development attaches great importance. Among all kinds of sensors, the pressure sensor has the advantages of small size, light weight, high sensitivity, stability and reliability, low cost, and easy integration, and can be widely used in pressure, height, acceleration, liquid flow, flow rate, liquid level, and pressure. Measurement and Control. In addition, it is also widely used in water conservancy, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/35C23C14/58G01L1/18G01L9/06G01L23/10
Inventor 汪国军白煜王敏锐高阳飞张敏
Owner RES INST OF XIAN JIAOTONG UNIV & SUZHOU
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