Characteristic statistical test method for power semiconductor device
A technology for power semiconductors and testing methods, applied in the field of semiconductors, can solve the problems of low test efficiency, inability to repeat the test continuously, load current, inconvenient adjustment of device temperature, etc., and achieve the effect of accurate thermal modeling and aging analysis
Active Publication Date: 2019-05-17
SHANGHAI JIAO TONG UNIV
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Problems solved by technology
However, these methods are inconvenient to adjust the load current and device temperature; they cannot continuously repeat the test under the same electrical and temperature conditions; the test efficiency is low, and only the switching characteristics or recovery characteristics of one device can be tested at a time, which is difficult to meet the above requirements.
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[0058]The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several changes and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.
[0059] figure 1 It is a probability distribution chart of a certain loss or conduction voltage drop under different current / voltage / temperature levels, such as figure 1 As shown, keep the voltage and temperature constant first, then test the loss data at multiple current levels and calculate the probability density function of the loss. After taking a confidence level, you can get the confidence interval of the loss at each current level, and then draw it to get Probability distribution bands for losses...
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The invention provides a characteristic statistical test method for a power semiconductor device. The characteristic statistical test method for the power semiconductor device comprises the steps thatin a test cycle, switching characteristics of a switch pipe, conduction characteristics of the switch pipe, and conduction characteristics and recovery characteristics of a diode are tested under a set current value; a plurality of sets of characteristic data can be obtained through a circulation test mode, and a probability density function of the device characteristics under a set voltage, thetemperature and the current level can be obtained through calculation; so that two of the voltage, the temperature and the current are controlled to be a definite value through a variable test mode, the probability density function of the device characteristics at each level of the variable is obtained by changing one of the voltage, the temperature and the current to be subjected to the continuous multi-cycle tests, a probability distribution band is plotted according to a confidence interval instead of a characteristic-current diagram, a characteristic-voltage diagram and a characteristic-temperature diagram of a conventional single curve, and data of the power semiconductor device characteristics has a statistical rule.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a statistical test method for characteristics of power semiconductor devices. Background technique [0002] With the increase in the rated capacity of power electronic devices and the complexity of the working environment, the requirements for the reliability of power semiconductor devices in applications are also increasing Modeling and evaluation is an important way to improve the economy and safety of power electronic equipment. In order to more accurately predict the thermal characteristics and aging of power electronic systems, it is not only necessary to obtain the switching and conduction characteristics of power semiconductor devices under working conditions, but also to consider the differences between different devices of the same model and the existence of test results. error. Therefore, it is of great significance to obtain the probability distribution of the...
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Inventor 马柯林家扬朱晔
Owner SHANGHAI JIAO TONG UNIV