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Manufacturing method for aluminum silicon carbide material and manufactured aluminum silicon carbide material

A technology of aluminum silicon carbide and silicon carbide, which is applied in the field of preparation of aluminum silicon carbide materials, can solve the problems of poor rigidity, variability, and low thermal conductivity, and achieve the effects of low density, easy heat dissipation, and high thermal conductivity

Active Publication Date: 2019-05-21
HUNAN HARVEST TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The invention provides a method for preparing an aluminum silicon carbide material and the prepared aluminum silicon carbide material to solve the technical problems of low thermal conductivity, poor rigidity and variability of the aluminum silicon carbide material prepared in the prior art

Method used

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  • Manufacturing method for aluminum silicon carbide material and manufactured aluminum silicon carbide material
  • Manufacturing method for aluminum silicon carbide material and manufactured aluminum silicon carbide material
  • Manufacturing method for aluminum silicon carbide material and manufactured aluminum silicon carbide material

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preparation example Construction

[0025] Such as figure 2 As shown, in this embodiment, the preparation method of silicon carbide wetted by aluminum includes the following steps: (1) filling silicon carbide powder into a mould, pressurizing and molding to form a green body; (2) making step (1) The green body in the process is preheated, pressurized and dipped in aluminum, and silicon carbide wetted by aluminum is obtained. The above-mentioned silicon carbide powder is formed into a billet by pressure, and then impregnated with aluminum liquid. Through electrostatic adsorption and molecular motion, aluminum is adsorbed on the surface of silicon carbide particles, so that the silicon carbide is fully wetted, so that the carbonization of the aluminum silicon carbide material can be obtained by stirring casting. The silicon volume fraction is greatly increased. The powder filling process through the mold can reduce the waste of powder, and can also save energy and labor costs.

[0026] In the present embodiment...

Embodiment 1

[0037] (1) will D 50 80μm silicon carbide powder and D 50 Add 10μm silicon carbide powder into the mixer and mix evenly, D 50 80μm silicon carbide powder with D 50 The mass mixing ratio of silicon carbide powder with a thickness of 10 μm is 1:4; the prepared silicon carbide powder is evenly filled into a graphite mold, and molded under a pressure of 11Mpa to form a green body;

[0038] (2) Preheat the green body in step (1) at 620°C, and carry out aluminum immersion under the condition of a vacuum of 4000Pa. The aluminum immersion adopts ZL102 aluminum alloy, and the time of pressurized aluminum immersion is 1h, and the pressure is 6Mpa. The temperature of the aluminum liquid immersed in aluminum is 740°C, and silicon carbide wetted by aluminum is obtained, wherein the volume fraction of silicon carbide is 70%;

[0039] (3) First control the temperature to 740°C and let the air flow into 0.5m 3 / h of argon, and then mix the silicon carbide wetted by aluminum with the alumi...

Embodiment 2

[0041] (1) will D 50 75μm silicon carbide powder and D 50 Add 15μm silicon carbide powder into the mixer and mix evenly, D 50 75μm silicon carbide powder with D 50 The mass mixing ratio of silicon carbide powder with a thickness of 15 μm is 1:3.5; the prepared silicon carbide powder is evenly filled into a graphite mold, and molded under a pressure of 10Mpa to form a green body;

[0042] (2) Preheat the biscuit in step (1) at 640°C, and carry out aluminum dipping under the condition of vacuum degree of 4000Pa. ZL102 aluminum alloy is used for dipping aluminum, and the time of pressing and dipping aluminum is 1.5h, and the pressure is 5Mpa , the temperature of the aluminum liquid immersed in aluminum is 740°C, and silicon carbide wetted by aluminum is obtained, wherein the volume fraction of silicon carbide is 75%;

[0043] (3) First control the temperature to 750°C and let the air flow into 0.6m 3 / h of argon, and then mix the silicon carbide wetted by aluminum with the al...

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Abstract

The invention discloses a manufacturing method for an aluminum silicon carbide material and the manufactured aluminum silicon carbide material. The manufacturing method comprises the steps that silicon carbide which is soaked in aluminum is mixed with an aluminum alloy solution, is mixed and charged in a mould, and is compacted and moulded to obtain the aluminum silicon carbide material. Accordingto the manufacturing method for the aluminum silicon carbide material, the silicon carbide which is soaked in the aluminum is mixed with the aluminum alloy solution, so that silicon carbide particlesare fully wetted by the aluminum before being mixed with the aluminum alloy solution; then the silicon carbide material which is soaked by the aluminum is diluted by adopting the aluminum alloy solution with a stirring casting method; and the aluminum silicon carbide material is manufactured. The manufacturing method is simple, convenient and easy to operate, and the reaction process is easy to control; the surface of the silicon carbide is wrapped with aluminum, so that the silicon carbide particles are fully wetted; then the silicon carbide particles are added into the aluminum alloy solution, and the silicon carbide particles are mixed with the aluminum alloy solution more easily, which means more silicon carbide can be dissolved for the aluminum alloy solution of the same size; the silicon carbide content in the aluminum silicon carbide material is enhanced.

Description

technical field [0001] The invention relates to the field of aluminum silicon carbide materials, in particular, to a preparation method of aluminum silicon carbide materials. In addition, the present invention also relates to an aluminum silicon carbide material obtained by the above-mentioned preparation method of the aluminum silicon carbide material. Background technique [0002] Aluminum silicon carbide (AlSiC) is a metal-based thermal management composite material composed of aluminum and silicon carbide. It is a special packaging material for electronic components. It mainly refers to the combination of aluminum and silicon carbide with a high volume fraction into a low-density, high thermal conductivity And packaging materials with low expansion coefficient, which are widely used in the field of electronic packaging. At present, aluminum silicon carbide mainly adopts powder metallurgy method and stirring casting method. The powder metallurgy method is to mix aluminu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C21/00C22C32/00C22C29/06C22C1/10
Inventor 陈迎龙肖浩杨盛良
Owner HUNAN HARVEST TECH DEV