A method to amplify nonlinear effects and detect electron ultrafast processes
A nonlinear effect and ultra-fast process technology, applied in the field of nonlinear modulation of photonic crystals, can solve problems such as photonic crystal drift, and achieve the effect of obvious amplification effect
Active Publication Date: 2022-01-28
FUDAN UNIV
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However, when the time of the pump pulse is significantly shorter than the residence time of the signal pulse in the photonic crystal, the above mechanism is obviously contradictory, because the pump pulse is only in the extremely short time (relative to the residence time of the signal pulse ) changes the properties of photonic crystals, and it cannot be considered that "the energy band and band gap of photonic crystals have continuously drifted".
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[0034] The following is a specific example to illustrate a new method of nonlinear effect amplification and detection of electron ultrafast process based on nonlinear dynamic modulation process.
[0035] 1, figure 1 It is a working diagram of a two-dimensional photonic crystal logic device. In this system, we realize the amplification of nonlinear effects and the detection of electronic ultrafast processes based on nonlinear dynamic modulation processes. Such as figure 1 As shown, the low-intensity signal pulse and high-intensity pump pulse from the outside reach the photonic crystal from different optical paths, and both can be Gaussian modulated pulses with the same center frequency of 3.75×10 14 Hz and the same pulse time length of 6fs (slightly greater than twice the period corresponding to the pulse center frequency). The optical path length of the two pulses can be adjusted, so the relative time of the two pulses arriving at the photonic crystal can be changed. "The di...
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Abstract
The invention belongs to the technical field of nonlinear modulation of photonic crystals, in particular to a method for amplifying nonlinear effects and detecting ultrafast processes of electrons. The method of the present invention includes: selecting a photonic crystal system containing nonlinear materials, selecting a frequency with a low transmittance, selecting ultrashort pump and signal pulses, and the time length of the pump pulse is obviously shorter than the residence time of the signal pulse in the photonic crystal. By controlling the arrival of the pump pulse at some specific time, the nonlinear modulation effect can be amplified, and the ultrafast electronic process inside the nonlinear material can be observed. The significant change in transmittance produced by the method of the present invention is due to a new "dynamic modulation mechanism"; only pumping at a specific time, the phase will destroy the "coherence and destructiveness" between the first and higher order pulses of the transmitted field ”, resulting in a substantial increase in transmittance. The method of the invention has universal applicability and is not sensitive to material parameters, composition of photonic crystal or multi-scatterer system, structural parameters and the like.
Description
technical field [0001] The invention belongs to the technical field of nonlinear modulation of photonic crystals, and in particular relates to a method for amplifying nonlinear effects and detecting ultrafast processes inside electrons in photonic crystals or multi-scattering body systems. Background technique [0002] Photonic crystal is a new type of photonic material artificially manufactured with a periodic change in dielectric constant, rich dispersion effect and photonic band gap, and its characteristic is that it has photonic energy band and photonic band gap. When the frequency of the single-frequency incident light falls within the photonic band gap, light cannot pass through the infinite photonic crystal. However, for a finite-sized photonic crystal, even if the frequency of the single-frequency incident light falls within the photonic band gap, there will still be a certain transmittance. . Generally speaking, if the thickness of the photonic crystal is very thin...
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IPC IPC(8): G02F1/35G02F1/355
Inventor 蒋寻涯窦宇身汝广喆李裘粹
Owner FUDAN UNIV