Method for connecting cross-components at optimised density
A technology for components and connection surfaces, applied in the field of vertical connection, which can solve the problems of complex manufacturing methods and expensive alignment steps.
Inactive Publication Date: 2019-05-21
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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[0012] However, the manufacturing method disclosed by the document US 2010 / 207266 is relatively complex, since the disclosed manufacturing method requires a large number of deposition steps, in particular for forming the base, the insert and the mixing barrier, thus requiring expensive alignment steps
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Embodiment Construction
[0078] figure 1 An assembly 1 of two connection parts 100 , 200 is represented, the connection of which is obtained by the method according to the first embodiment of the invention. Thus, the first component 100 may be eg an optical sensor such as a CCD array or a CMOS array, or an imager such as an LCD array, to be connected to a second component such as optical sensor or imager electronics. Therefore, if figure 1 The method shown is aimed at connecting the semiconductor structure 102 of the first component 100 with the semiconductor structure 202 of the second component.
[0079] Therefore, the first component 100 may include a first type of semiconductor substrate, such as a III-IV semiconductor material substrate such as a gallium nitride / corundum type substrate, and the second component may include a third type of substrate such as a silicon (Si) substrate or a germanium (Ge) substrate. Two types of semiconductor substrates.
[0080] In order to realize the connection ...
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The invention relates to a method for electrical connection by hybridisation of a first component (100) with a second component (200). The method comprises the following steps: forming pads of ductilematerial (111, 121) in contact respectively with connection zones (110, 120) of the first component (100); forming inserts (211, 221) of conductive material in contact with the connection zones (210,220) of the second component (200); forming hybridisation barriers (212, 222) arranged between the inserts (211, 221) and electrically insulated from each other, said first and second hybridisation barriers (212, 222) serving as a barrier by containing the deformation of the pads of ductile material (111, 121) during the connection of the connection zones (210, 220) of the first component (100) with those of the second component (200). The invention also relates to an assembly (1) of two connected components (100, 200).
Description
technical field [0001] The present invention relates to the fields of microelectronics and optoelectronics, and more particularly to methods for interconnecting microelectronic and optoelectronic components, in particular vertical connection methods (also known as "hybrid" and better known as "flip-chip" ). [0002] Accordingly, the invention relates to a method for interconnecting two components and an assembly comprising two interconnected components. Background technique [0003] For certain applications, especially optoelectronic devices, it may be desirable to interconnect components. This is especially true for light-sensing applications, where the light-harvesting components are typically integrated in III-V semiconductor substrates such as gallium nitride (GaN) substrates, and the processing electronics for processing the signals obtained by the trapping components are integrated in silicon (Si) substrate. [0004] In order to interconnect these components, it is ...
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IPC IPC(8): H01L23/485H01L21/60
CPCH01L2224/10145H01L2224/11602H01L2224/13186H01L24/11H01L24/13H01L24/16H01L24/81H01L25/0657H01L25/50H01L2224/0401H01L2224/05554H01L2224/05555H01L2224/05573H01L2224/05582H01L2224/05639H01L2224/05644H01L2224/05655H01L2224/05664H01L2224/05669H01L2224/1148H01L2224/13007H01L2224/13014H01L2224/13019H01L2224/13023H01L2224/13078H01L2224/13147H01L2224/13164H01L2224/13169H01L2224/13171H01L2224/13184H01L2224/13562H01L2224/1357H01L2224/13644H01L2224/1601H01L2224/81193H01L2224/81201H01L2224/81345H01L2224/81898H01L2924/3841H01L2224/05568H01L2224/11472H01L2224/13012H01L2224/13011H01L2224/13166H01L2224/81099H01L2224/1182H01L2225/06513H01L2924/00014H01L2924/00012H01L2924/01014H01L2924/049H01L2924/01074H01L2924/04941H01L27/14634H01L27/14636H01L27/1469
Inventor 法兰科斯·玛丽昂莉迪·马蒂厄弗雷德里克·伯格
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES